| Transparent conducting oxides for electrode applications in light emitting and absorbing devices H Liu, V Avrutin, N Izyumskaya, Ü Özgür, H Morkoç Superlattices and Microstructures 48 (5), 458-484, 2010 | 802 | 2010 |
| GaN-based light-emitting diodes: Efficiency at high injection levels Ü Ozgur, H Liu, X Li, X Ni, H Morkoc Proceedings of the IEEE 98 (7), 1180-1196, 2010 | 155 | 2010 |
| Impurity complexes and conductivity of Ga-doped ZnO DO Demchenko, B Earles, HY Liu, V Avrutin, N Izyumskaya, Ü Özgür, ... Physical Review B 84 (7), 075201, 2011 | 94 | 2011 |
| Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy HM H. Y. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, A J. Appl. Phys. 111 (10), 103713, 2012 | 46 | 2012 |
| Highly conductive and optically transparent GZO films grown under metal‐rich conditions by plasma assisted MBE HY Liu, V Avrutin, N Izyumskaya, MA Reshchikov, Ü Özgür, H Morkoç physica status solidi (RRL)–Rapid Research Letters 4 (3‐4), 70-72, 2010 | 41 | 2010 |
| Donor behavior of Sb in ZnO HY Liu, N Izyumskaya, V Avrutin, Ü Özgür, AB Yankovich, AV Kvit, ... Journal of Applied Physics 112 (3), 2012 | 40 | 2012 |
| Structural and electrical properties of Pb (Zr, Ti) O3 grown on (0001) GaN using a double PbTiO3∕ PbO bridge layer B Xiao, X Gu, N Izyumskaya, V Avrutin, J Xie, H Liu, H Morkoç Applied Physics Letters 91 (18), 2007 | 38 | 2007 |
| Large pyroelectric effect in undoped epitaxial Pb (Zr, Ti) O3 thin films on SrTiO3 substrates B Xiao, V Avrutin, H Liu, Ü Özgür, H Morkoç, C Lu Applied Physics Letters 93 (5), 2008 | 37 | 2008 |
| Hot-electron energy relaxation time in Ga-doped ZnO films E Šermukšnis, J Liberis, M Ramonas, A Matulionis, M Toporkov, HY Liu, ... Journal of Applied Physics 117 (6), 2015 | 31 | 2015 |
| InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide X Li, HY Liu, S Liu, X Ni, M Wu, V Avrutin, N Izyumskaya, Ü Özgür, ... physica status solidi (a) 207 (8), 1993-1996, 2010 | 31 | 2010 |
| Effect of carrier spillover and Auger recombination on the efficiency droop in InGaN-based blue LEDs X Li, H Liu, X Ni, Ü Özgür, H Morkoç Superlattices and Microstructures 47 (1), 118-122, 2010 | 30 | 2010 |
| phys. stat. sol. X Li, HY Liu, S Liu, X Ni, M Wu, V Avrutin, N Izyumskaya, Ü Özgür, ... Phys. Stat. Sol. A 207, 286, 2010 | 28 | 2010 |
| High response solar-blind MgZnO photodetectors grown by molecular beam epitaxy WV Schoenfeld, M Wei, RC Boutwell, H Liu Oxide-based Materials and Devices V 8987, 329-340, 2014 | 25 | 2014 |
| Epitaxial growth of (001)-oriented Ba0. 5Sr0. 5TiO3 thin films on a-plane sapphire with an MgO/ZnO bridge layer B Xiao, H Liu, V Avrutin, JH Leach, E Rowe, H Liu, Ü Özgür, H Morkoç, ... Applied Physics Letters 95 (21), 2009 | 25 | 2009 |
| Epitaxial relationship of MBE grown barium hexaferrite (0 0 0 1) films on sapphire (0 0 0 1) H Liu, V Avrutin, B Xiao, E Rowe, HR Liu, Ü Özgür, H Morkoç Journal of crystal growth 312 (5), 671-675, 2010 | 21 | 2010 |
| Hexagonal-based pyramid void defects in GaN and InGaN AB Yankovich, AV Kvit, X Li, F Zhang, V Avrutin, HY Liu, N Izyumskaya, ... Journal of Applied Physics 111 (2), 2012 | 18 | 2012 |
| InGaN based light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p‐GaN HY Liu, X Li, S Liu, X Ni, M Wu, V Avrutin, N Izyumskaya, Ü Özgür, ... physica status solidi c 8 (5), 1548-1551, 2011 | 17 | 2011 |
| Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy AV Kvit, AB Yankovich, V Avrutin, H Liu, N Izyumskaya, Ü Özgür, ... Journal of Applied Physics 112 (12), 2012 | 16 | 2012 |
| Thickness variations and absence of lateral compositional fluctuations in aberration-corrected STEM images of InGaN LED active regions at low dose AB Yankovich, AV Kvit, X Li, F Zhang, V Avrutin, H Liu, N Izyumskaya, ... Microscopy and microanalysis 20 (3), 864-868, 2014 | 14 | 2014 |
| Temperature Dependent Behavior of the SPV for n-type GaN JD McNamara, M Foussekis, H Liu, H Morkoç, MA Reshchikov, AA Baski Gallium Nitride Materials and Devices VII 8262, 147-152, 2012 | 14 | 2012 |
Xing LiOstendo Technologies, IncEmail yang diverifikasi di mymail.vcu.edu
