| Highly Sensitive, Ultrafast, and Broadband Photo‐Detecting Field‐Effect Transistor with Transition‐Metal Dichalcogenide van der Waals Heterostructures of MoTe2 and PdSe … AM Afzal, MZ Iqbal, G Dastgeer, A Ahmad, B Park Advanced Science 8 (11), 2003713, 2021 | 75 | 2021 |
| High-Performance p-BP/n-PdSe2 Near-Infrared Photodiodes with a Fast and Gate-Tunable Photoresponse AM Afzal, G Dastgeer, MZ Iqbal, P Gautam, MM Faisal ACS applied materials & interfaces 12 (17), 19625-19634, 2020 | 75 | 2020 |
| Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS2 van der Waals Heterojunction Diode G Dastgeer, MF Khan, G Nazir, AM Afzal, S Aftab, BA Naqvi, J Cha, ... ACS applied materials & interfaces 10 (15), 13150-13157, 2018 | 67 | 2018 |
| Sol-gel assisted Ag doped NiAl2O4 nanomaterials and their nanocomposites with g-C3N4 nanosheets for the removal of organic effluents A Irshad, MF Warsi, PO Agboola, G Dastgeer, M Shahid Journal of Alloys and Compounds 902, 163805, 2022 | 57 | 2022 |
| Bipolar Junction Transistor Exhibiting Excellent Output Characteristics with a Prompt Response against the Selective Protein Ghulam Dastgeer,* Zafar Muhammad Shahzad,* Heeyeop Chae, Yong Ho Kim, Byung ... Advanced Functional Materials, 2022 | 55 | 2022 |
| WS2/GeSe/WS2 Bipolar Transistor-Based Chemical Sensor with Fast Response and Recovery Times AM Afzal, MZ Iqbal, G Dastgeer, G Nazir, S Mumtaz, M Usman, J Eom ACS applied materials & interfaces 12 (35), 39524-39532, 2020 | 53 | 2020 |
| Comparison of Electrical and Photoelectrical Properties of ReS2 Field-Effect Transistors on Different Dielectric Substrates G Nazir, MA Rehman, MF Khan, G Dastgeer, S Aftab, AM Afzal, Y Seo, ... ACS applied materials & interfaces 10 (38), 32501-32509, 2018 | 49 | 2018 |
| A review on two-dimensional (2D) magnetic materials and their potential applications in spintronics and spin-caloritronic E Elahi, G Dastgeer, G Nazir, S Nisar, M Bashir, HA Qureshi, D Kim, J Aziz, ... Computational Materials Science 213, 111670, 2022 | 45 | 2022 |
| Gate modulation of the spin current in graphene/WSe2 van der Waals heterostructure at room temperature G Dastgeer, AM Afzal, SHA Jaffery, M Imran, MA Assiri, S Nisar Journal of Alloys and Compounds 919, 165815, 2022 | 42 | 2022 |
| Tunneling-based rectification and photoresponsivity in black phosphorus/hexagonal boron nitride/rhenium diselenide van der Waals heterojunction diode AM Afzal, Y Javed, NA Shad, MZ Iqbal, G Dastgeer, MM Sajid, S Mumtaz Nanoscale 12 (5), 3455-3468, 2020 | 41 | 2020 |
| Heteroatoms-doped hierarchical porous carbons: Multifunctional materials for effective methylene blue removal and cryogenic hydrogen storage G Nazir, A Rehman, S Hussain, AM Afzal, G Dastgeer, MA Rehman, ... Colloids and Surfaces A: Physicochemical and Engineering Aspects 630, 127554, 2021 | 38 | 2021 |
| p‐GeSe/n‐ReS2 Heterojunction Rectifier Exhibiting A Fast Photoresponse with Ultra‐High Frequency‐Switching Applications G Dastgeer, AM Afzal, G Nazir, N Sarwar Advanced Materials Interfaces 8 (22), 2100705, 2021 | 38 | 2021 |
| Synaptic Characteristics of an Ultrathin Hexagonal Boron Nitride (h‐BN) Diffusive Memristor G Dastgeer, H Abbas, DY Kim, J Eom, C Choi physica status solidi (RRL)–Rapid Research Letters 15 (1), 2000473, 2021 | 34 | 2021 |
| Black phosphorus-IGZO van der waals diode with low-resistivity metal contacts G Dastgeer, MF Khan, J Cha, AM Afzal, KH Min, BM Ko, H Liu, S Hong, ... ACS applied materials & interfaces 11 (11), 10959-10966, 2019 | 34 | 2019 |
| Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching G Dastgeer, AM Afzal, J Aziz, S Hussain, SHA Jaffery, D Kim, M Imran, ... Materials 14 (24), 7535, 2021 | 28 | 2021 |
| Ultrafast and Highly Stable Photodetectors Based on p-GeSe/n-ReSe2 Heterostructures AM Afzal, MZ Iqbal, G Dastgeer, G Nazir, J Eom ACS Applied Materials & Interfaces 13 (40), 47882-47894, 2021 | 28 | 2021 |
| Thickness‐Dependent, Gate‐Tunable Rectification and Highly Sensitive Photovoltaic Behavior of Heterostructured GeSe/WS2 p–n Diode SHA Jaffery, J Kim, G Dastgeer, M Hussain, A Ali, S Hussain, J Eom, ... Advanced Materials Interfaces 7 (23), 2000893, 2020 | 28 | 2020 |
| Synthesis of citrate-capped copper nanoparticles: A low temperature sintering approach for the fabrication of oxidation stable flexible conductive film N Sarwar, SH Choi, G Dastgeer, UB Humayoun, M Kumar, A Nawaz, ... Applied Surface Science 542, 148609, 2021 | 26 | 2021 |
| Distinct Detection of Thermally Induced Spin Voltage in Pt/WS2/Ni81Fe19 by the Inverse Spin Hall Effect G Dastgeer, MA Shehzad, J Eom ACS Applied Materials & Interfaces 11 (51), 48533-48539, 2019 | 26 | 2019 |
| Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS2 films AM Afzal, MF Khan, G Nazir, G Dastgeer, S Aftab, I Akhtar, Y Seo, J Eom Scientific Reports 8 (1), 3412, 2018 | 26 | 2018 |
AMIR MUHAMMAD AFZALResearch Associate, Kwangwoon University, Seoul South KoreaEmail yang diverifikasi di sju.ac.kr
