| A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In 0.53Ga0.47As … É O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ... Journal of Applied Physics 109 (2), 024101, 2011 | 171 | 2011 |
| Confined epitaxial lateral overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates L Czornomaz, E Uccelli, M Sousa, V Deshpande, V Djara, D Caimi, ... 2015 Symposium on VLSI Technology (VLSI Technology), T172-T173, 2015 | 96 | 2015 |
| Impact of the energy difference in LUMO and HOMO of the bulk heterojunctions components on the efficiency of organic solar cells H Derouiche, V Djara Solar energy materials and solar cells 91 (13), 1163-1167, 2007 | 82 | 2007 |
| Monitoring PMMA Elimination by Reactive Ion Etching from a Lamellar PS-b-PMMA Thin Film by ex Situ TEM Methods RA Farrell, N Petkov, MT Shaw, V Djara, JD Holmes, MA Morris Macromolecules 43 (20), 8651-8655, 2010 | 77 | 2010 |
| Large-scale parallel arrays of silicon nanowires via block copolymer directed self-assembly RA Farrell, NT Kinahan, S Hansel, KO Stuen, N Petkov, MT Shaw, ... Nanoscale 4 (10), 3228-3236, 2012 | 68 | 2012 |
| Impact of Forming Gas Annealing on the Performance of Surface-Channel In0.53Ga0.47As MOSFETs With an ALD Al2O3 Gate Dielectric V Djara, K Cherkaoui, M Schmidt, S Monaghan, É O'Connor, IM Povey, ... IEEE Transactions on Electron Devices 59 (4), 1084-1090, 2012 | 63 | 2012 |
| Impact of forming gas annealing on the performance of surface-channel In0.53Ga0.47As MOSFETs with an ALD Al2O3 gate dielectric V Djara, K Cherkaoui, M Schmidt, S Monaghan, É O'Connor, IM Povey, ... IEEE transactions on electron devices 59 (4), 1084, 2012 | 63 | 2012 |
| Organic photovoltaic devices: influence of the cell configuration on its performences JC Bernede, H Derouiche, V Djara Solar energy materials and solar cells 87 (1-4), 261-270, 2005 | 57 | 2005 |
| The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System PK Hurley, E O'Connor, V Djara, S Monaghan, IM Povey, RD Long, ... IEEE Transactions on Device and Materials Reliability 13 (4), 429-443, 2013 | 55 | 2013 |
| Effect of the interface morphology on the fill factor of plastic solar cells V Djara, JC Bernède Thin Solid Films 493 (1-2), 273-277, 2005 | 54 | 2005 |
| Advanced 3D monolithic hybrid CMOS with sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI fin pFETs V Deshpande, V Djara, E O'Connor, P Hashemi, K Balakrishnan, M Sousa, ... 2015 IEEE International Electron Devices Meeting (IEDM), 8.8. 1-8.8. 4, 2015 | 48 | 2015 |
| CMOS-Compatible Replacement Metal Gate InGaAs-OI FinFET With ION = 156uA/um at VDD = 0.5 V and IOFF = 100 nA/um V Djara, V Deshpande, M Sousa, D Caimi, L Czornomaz, J Fompeyrine IEEE Electron Device Letters 37 (2), 169-172, 2016 | 46* | 2016 |
| Junctionless nanowire transistors for 3d monolithic integration of cmos inverters P Hurley, K Cherkaoui, V Djara US Patent App. 14/782,570, 2016 | 41 | 2016 |
| An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch V Djara, V Deshpande, E Uccelli, N Daix, D Caimi, C Rossel, M Sousa, ... 2015 Symposium on VLSI Technology (VLSI Technology), T176-T177, 2015 | 35 | 2015 |
| Characterisation of a novel electron beam lithography resist, SML and its comparison to PMMA and ZEP resists A Gangnaik, YM Georgiev, B McCarthy, N Petkov, V Djara, JD Holmes Microelectronic engineering 123, 126-130, 2014 | 33 | 2014 |
| TiN/ZrO2/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications S Monaghan, K Cherkaoui, E O'connor, V Djara, PK Hurley, L Oberbeck, ... IEEE electron device letters 30 (3), 219-221, 2009 | 33 | 2009 |
| Electrically active interface defects in the In0.53Ga0.47As MOS system V Djara, TP O’Regan, K Cherkaoui, M Schmidt, S Monaghan, É O’Connor, ... Microelectronic Engineering 109, 182-188, 2013 | 29 | 2013 |
| Atomically flat low-resistive germanide contacts formed by laser thermal anneal M Shayesteh, K Huet, I Toqué-Tresonne, R Negru, CLM Daunt, N Kelly, ... IEEE transactions on electron devices 60 (7), 2178-2185, 2013 | 29 | 2013 |
| NiGe contacts and junction architectures for P and As doped germanium devices M Shayesteh, CLLM Daunt, D O'Connell, V Djara, M White, B Long, ... IEEE transactions on electron devices 58 (11), 3801-3807, 2011 | 29 | 2011 |
| Three-dimensional monolithic integration of III–V and Si (Ge) FETs for hybrid CMOS and beyond V Deshpande, V Djara, E O’Connor, P Hashemi, T Morf, K Balakrishnan, ... Japanese Journal of Applied Physics 56 (4S), 04CA05, 2017 | 28 | 2017 |
