| Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors MDH Chowdhury, P Migliorato, J Jang Applied Physics Letters 97 (17), 173506, 2010 | 231 | 2010 |
| Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors MDH Chowdhury, P Migliorato, J Jang Applied Physics Letters 98 (15), 153511, 2011 | 142 | 2011 |
| Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor P Migliorato, M Delwar Hossain Chowdhury, J Gwang Um, M Seok, ... Applied Physics Letters 101 (12), 123502, 2012 | 131 | 2012 |
| Effect of SiO2 and SiO2/SiNx Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity MDH Chowdhury, M Mativenga, JG Um, RK Mruthyunjaya, GN Heiler, ... IEEE Transactions on Electron Devices 62 (3), 869-874, 2015 | 80 | 2015 |
| Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc oxide thin film transistors MD Hossain Chowdhury, P Migliorato, J Jang Applied Physics Letters 102 (14), 143506, 2013 | 74 | 2013 |
| Analysis of improved performance under negative bias illumination stress of dual gate driving a-IGZO TFT by TCAD simulation MM Billah, MDH Chowdhury, M Mativenga, JG Um, RK Mruthyunjaya, ... IEEE Electron Device Letters 37 (6), 735-738, 2016 | 70 | 2016 |
| Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250° C MDH Chowdhury, JG Um, J Jang Applied Physics Letters 105 (23), 233504, 2014 | 65 | 2014 |
| Effect of annealing time on bias stress and light-induced instabilities in amorphous indium–gallium–zinc-oxide thin-film transistors MDH Chowdhury, SH Ryu, P Migliorato, J Jang Journal of Applied Physics 110 (11), 114503, 2011 | 48 | 2011 |
| Low temperature characteristics in amorphous indium-gallium-zinc-oxide thin-film transistors down to 10 K MD Hossain Chowdhury, P Migliorato, J Jang Applied Physics Letters 103 (15), 152103, 2013 | 47 | 2013 |
| Improvement in performance of solution-processed indium–zinc–tin oxide thin-film transistors by UV/O3 treatment on zirconium oxide gate insulator BR Naik, C Avis, MDH Chowdhury, T Kim, T Lin, J Jang Japanese Journal of Applied Physics 55 (3S1), 03CC02, 2016 | 43 | 2016 |
| Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor M Chun, JG Um, MS Park, MDH Chowdhury, J Jang AIP Advances 6 (7), 075217, 2016 | 25 | 2016 |
| Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors W Wang, G Xu, MDH Chowdhury, H Wang, JK Um, Z Ji, N Gao, Z Zong, ... Physical Review B 98 (24), 245308, 2018 | 22 | 2018 |
| Characterization and Modeling of a-IGZO TFTs P Migliorato, MDH Chowdhury, JG Um, M Seok, M Martivenga, J Jang Journal of Display Technology 11 (6), 497-505, 2014 | 17 | 2014 |
| Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor E Lee, MDH Chowdhury, MS Park, J Jang Applied Physics Letters 107 (23), 233509, 2015 | 14 | 2015 |
| Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor M Chun, MDH Chowdhury, J Jang AIP Advances 5 (5), 057165, 2015 | 14 | 2015 |
Jin JangKyung Hee UniversityEmail yang diverifikasi di khu.ac.kr
