Chao Chen (陈超)
Chao Chen (陈超)
Verified email at
Cited by
Cited by
Recent progress in resistive random access memories: materials, switching mechanisms, and performance
F Pan, S Gao, C Chen, C Song, F Zeng
Materials Science and Engineering: R: Reports 83, 1-59, 2014
Resistive Switching and Magnetic Modulation in Cobalt‐Doped ZnO
G Chen, C Song, C Chen, S Gao, F Zeng, F Pan
Advanced Materials 24 (26), 3515-3520, 2012
Nonvolatile resistive switching memories-characteristics, mechanisms and challenges
F Pan, C Chen, Z Wang, Y Yang, J Yang, F Zeng
Progress in Natural Science: Materials International 20, 1-15, 2010
Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system
S Li, F Zeng, C Chen, H Liu, G Tang, S Gao, C Song, Y Lin, F Pan, D Guo
Journal of Materials Chemistry C 1 (34), 5292-5298, 2013
Dynamic processes of resistive switching in metallic filament-based organic memory devices
S Gao, C Song, C Chen, F Zeng, F Pan
The Journal of Physical Chemistry C 116 (33), 17955-17959, 2012
Improved Dielectric Properties and Energy Storage Density of Poly (vinylidene fluoride-co-hexafluoropropylene) Nanocomposite with Hydantoin Epoxy Resin Coated BaTiO3.
H Luo, D Zhang, C Jiang, X Yuan, C Chen, K Zhou
ACS applied materials & interfaces, 2015
Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device
C Chen, YC Yang, F Zeng, F Pan
Applied Physics Letters 97 (8), 083502-083502-3, 2010
Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure
C Chen, F Pan, ZS Wang, J Yang, F Zeng
Journal of Applied Physics 111 (1), 013702, 2012
Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure
C Chen, C Song, J Yang, F Zeng, F Pan
Applied Physics Letters 100 (25), 253509, 2012
Electrical manipulation of orbital occupancy and magnetic anisotropy in manganites
B Cui, C Song, GA Gehring, F Li, G Wang, C Chen, J Peng, H Mao, ...
Advanced Functional Materials, 2014
Resistive switching induced by metallic filaments formation through Poly (3, 4-ethylene-dioxythiophene): Poly (styrenesulfonate)
Z Wang, F Zeng, J Yang, C Chen, F Pan
ACS applied materials & interfaces 4 (1), 447-453, 2011
Formation process of conducting filament in planar organic resistive memory
S Gao, C Song, C Chen, F Zeng, F Pan
Applied Physics Letters 102 (14), 141606, 2013
Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices
C Chen, S Gao, F Zeng, GS Tang, SZ Li, C Song, HD Fu, F Pan
Journal of Applied Physics 114 (1), 014502, 2013
Reversible Ferromagnetic Phase Transition in Electrode‐Gated Manganites
B Cui, C Song, G Wang, Y Yan, J Peng, J Miao, H Mao, F Li, C Chen, ...
Advanced Functional Materials 24 (46), 7233-7240, 2014
Conductance quantization in a Ag filament-based polymer resistive memory
S Gao, F Zeng, C Chen, G Tang, Y Lin, Z Zheng, C Song, F Pan
Nanotechnology 24 (33), 335201, 2013
Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices
YS Lin, F Zeng, SG Tang, HY Liu, C Chen, S Gao, YG Wang, F Pan
Journal of Applied Physics 113 (6), 064510, 2013
Conductance quantization in oxygen-anion-migration-based resistive switching memory devices
C Chen, S Gao, F Zeng, GY Wang, SZ Li, C Song, F Pan
Applied Physics Letters 103 (4), 043510, 2013
Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer
G Tang, F Zeng, C Chen, H Liu, S Gao, C Song, Y Lin, G Chen, F Pan
Nanoscale 5 (1), 422-428, 2013
Reproducible and controllable organic resistive memory based on Al/poly (3, 4-ethylene-dioxythiophene): poly (styrenesulfonate)/Al structure
ZS Wang, F Zeng, J Yang, C Chen, YC Yang, F Pan
Applied Physics Letters 97 (25), 253301, 2010
Multilevel resistance switching in Cu/TaO x/Pt structures induced by a coupled mechanism
YC Yang, C Chen, F Zeng, F Pan
Journal of Applied Physics 107 (9), 093701-093701-5, 2010
The system can't perform the operation now. Try again later.
Articles 1–20