Ryan McClintock
Ryan McClintock
Research Professor, Northwestern University
Verified email at northwestern.edu - Homepage
Title
Cited by
Cited by
Year
IEEE Photonics Technol. Lett
SM Kim, Y Wang, M Keever, JS Harris
3202004
High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well
K Mayes, A Yasan, R McClintock, D Shiell, SR Darvish, P Kung, ...
Applied physics letters 84 (7), 1046-1048, 2004
2042004
4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes
A Yasan, R McClintock, K Mayes, D Shiell, L Gautero, SR Darvish, P Kung, ...
Applied Physics Letters 83 (23), 4701-4703, 2003
1852003
High quantum efficiency AlGaN solar-blind p-i-n photodiodes
R McClintock, A Yasan, K Mayes, D Shiell, SR Darvish, P Kung, ...
Applied physics letters 84 (8), 1248-1250, 2004
1592004
Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm
A Yasan, R McClintock, K Mayes, SR Darvish, P Kung, M Razeghi
Applied physics letters 81 (5), 801-802, 2002
1252002
AlxGa1− xN for solar-blind UV detectors
P Sandvik, K Mi, F Shahedipour, R McClintock, A Yasan, P Kung, ...
Journal of crystal growth 231 (3), 366-370, 2001
1192001
solar-blind focal plane arrays based on
R McClintock, K Mayes, A Yasan, D Shiell, P Kung, M Razeghi
Applied Physics Letters 86 (1), 011117, 2005
1182005
Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes
R McClintock, JL Pau, K Minder, C Bayram, P Kung, M Razeghi
Applied Physics Letters 90 (14), 141112, 2007
1162007
Avalanche multiplication in AlGaN based solar-blind photodetectors
R McClintock, A Yasan, K Minder, P Kung, M Razeghi
Applied Physics Letters 87 (24), 241123, 2005
1072005
Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire
A Yasan, R McClintock, K Mayes, SR Darvish, H Zhang, P Kung, ...
Applied physics letters 81 (12), 2151-2153, 2002
872002
AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%
E Cicek, R McClintock, CY Cho, B Rahnema, M Razeghi
Applied Physics Letters 103 (19), 191108, 2013
832013
Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111)
CY Cho, Y Zhang, E Cicek, B Rahnema, Y Bai, R McClintock, M Razeghi
Applied Physics Letters 102 (21), 211110, 2013
762013
Back-illuminated separate absorption and multiplication GaN avalanche photodiodes
JL Pau, C Bayram, R McClintock, M Razeghi, D Silversmith
Applied Physics Letters 92 (10), 101120, 2008
722008
Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes
A Yasan, R McClintock, K Mayes, DH Kim, P Kung, M Razeghi
Applied physics letters 83 (20), 4083-4085, 2003
682003
Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices
M Razeghi, A Haddadi, AM Hoang, EK Huang, G Chen, S Bogdanov, ...
Infrared Physics & Technology 59, 41-52, 2013
662013
Geiger-mode operation of back-illuminated GaN avalanche photodiodes
JL Pau, R McClintock, K Minder, C Bayram, P Kung, M Razeghi, E Muņoz, ...
Applied Physics Letters 91 (4), 041104, 2007
632007
Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si (111)
Y Zhang, S Gautier, CY Cho, E Cicek, Z Vashaei, R McClintock, C Bayram, ...
Applied Physics Letters 102 (1), 011106, 2013
622013
Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates
E Cicek, Z Vashaei, R McClintock, C Bayram, M Razeghi
Applied Physics Letters 96 (26), 261107, 2010
602010
Delta-doping optimization for high quality -type GaN
C Bayram, JL Pau, R McClintock, M Razeghi
Journal of Applied Physics 104 (8), 083512, 2008
602008
Performance enhancement of GaN ultraviolet avalanche photodiodes with -type -doping
C Bayram, JL Pau, R McClintock, M Razeghi
Applied Physics Letters 92 (24), 241103, 2008
532008
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