Amir Zulkefli
Amir Zulkefli
Kyushu University, NIMS Junior Researcher, NIMS
Verified email at nims.go.jp
Title
Cited by
Cited by
Year
Three-dimensional finite element method simulation of perforated graphene Nano-Electro-Mechanical (NEM) switches
MA Zulkefli, MA Mohamed, KS Siow, B Yeop Majlis, J Kulothungan, ...
Micromachines (Q2, IF: 2.4) 8 (8), 236, 2017
122017
Enhanced Quantum Efficiency in Vertical Mixed-Thickness n-ReS2/p-Si Heterojunction Photodiodes
B Mukherjee, A Zulkefli, R Hayakawa, Y Wakayama, S Nakaharai
ACS Photonics (Q1, IF: 6.9) 6 (9), 2277-2286, 2019
92019
Laser‐Assisted Multilevel Non‐Volatile Memory Device Based on 2D van‐der‐Waals Few‐Layer‐ReS2/h‐BN/Graphene Heterostructures
B Mukherjee, A Zulkefli, K Watanabe, T Taniguchi, Y Wakayama, ...
Advanced Functional Materials (Q1, IF: 16.8) 30 (42), 2001688, 2020
82020
Stress analysis of perforated graphene nano-electro-mechanical (NEM) contact switches by 3D finite element simulation
MA Zulkefli, MA Mohamed, KS Siow, BY Majlis, J Kulothungan, ...
Microsystem Technologies (Q2, IF: 1.2) 24 (2), 1179-1187, 2018
72018
Light‐Assisted and Gate‐Tunable Oxygen Gas Sensor Based on Rhenium Disulfide Field‐Effect Transistors
A Zulkefli, B Mukherjee, R Hayakawa, T Iwasaki, S Nakaharai, ...
Physica Status Solidi (RRL)–Rapid Research Letters (Q1, IF: 2.3) 14 (11 …, 2020
22020
Optimization of beam length and air gap of suspended graphene NEMS switch for low pull-in voltage application
MA Zulkefli, MA Mohamed, KS Siow, BY Majlis
2016 IEEE International Conference on Semiconductor Electronics (ICSE), 29-32, 2016
22016
Nanoelectromechanical Switch Devices Based on Graphene and Carbon Nanotube (CNT)
MA Zulkefli, MA Mohamed, KS Slow, B YeopMajlis
Sains Malaysiana (Q2, IF: 0.7) 47 (3), 619-633, 2018
12018
Gate-bias tunable humidity sensors based on rhenium disulfide field-effect transistors
A Zulkefli, B Mukherjee, T Iwasaki, R Hayakawa, S Nakaharai, ...
Japanese Journal of Applied Physics 60 (SB), SBBH01, 2020
2020
Role of Traps in Few Layer n-ReS2 Phototransistor on top of p-MoTe2 Layer
B Mukherjee, A Zulkefli, K Ueno, Y Wakayama, S Nakaharai
The 79th JSAP Autumn Meeting 21 (21p-PB3-4), 2018
2018
Charge Trapping and Hysteresis Behavior in ReS2/SiO2 and ReS2/hBN Field Effect Transistors
A Zulkefli, B Mukherjee, K Watanabe, T Taniguchi, Y Wakayama, ...
The 79th JSAP Autumn Meeting 21 (21p-PB3-5), 2018
2018
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