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Zahra Vashaei
Zahra Vashaei
Engineering Manager, Lam Research
Verified email at lamresearch.com
Title
Cited by
Cited by
Year
Structural variation of cubic and hexagonal MgxZn1− xO layers grown on MgO (111)∕ c-sapphire
Z Vashaei, T Minegishi, H Suzuki, T Hanada, MW Cho, T Yao, A Setiawan
Journal of applied physics 98 (5), 2005
1382005
AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition
C Bayram, Z Vashaei, M Razeghi
Applied Physics Letters 96 (4), 2010
1132010
Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes
C Bayram, Z Vashaei, M Razeghi
Applied Physics Letters 97 (18), 2010
1042010
Influence of sputtering parameters on the crystallinity and crystal orientation of AlN layers deposited by RF sputtering using the AlN target
Z Vashaei, T Aikawa, M Ohtsuka, H Kobatake, H Fukuyama, S Ikeda, ...
Journal of Crystal Growth 311 (3), 459-462, 2009
852009
Characteristics of dislocations in ZnO layers grown by plasma-assisted molecular beam epitaxy under different Zn∕ O flux ratios
A Setiawan, Z Vashaei, MW Cho, T Yao, H Kato, M Sano, K Miyamoto, ...
Journal of Applied Physics 96 (7), 3763-3768, 2004
832004
Evidence for fractional crystallization of wadsleyite and ringwoodite from olivine melts in chondrules entrained in shock-melt veins
M Miyahara, A El Goresy, E Ohtani, T Nagase, M Nishijima, Z Vashaei, ...
Proceedings of the National Academy of Sciences 105 (25), 8542-8547, 2008
722008
Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates
E Cicek, Z Vashaei, R McClintock, C Bayram, M Razeghi
Applied Physics Letters 96 (26), 2010
712010
Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si (111)
Y Zhang, S Gautier, CY Cho, E Cicek, Z Vashaei, R McClintock, C Bayram, ...
Applied Physics Letters 102 (1), 2013
672013
Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes
C Bayram, Z Vashaei, M Razeghi
Applied Physics Letters 97 (9), 2010
672010
GaN avalanche photodiodes grown on m-plane freestanding GaN substrate
Z Vashaei, E Cicek, C Bayram, R McClintock, M Razeghi
Applied Physics Letters 96 (20), 2010
552010
Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature
Z Vashaei, C Bayram, M Razeghi
Journal of Applied Physics 107 (8), 2010
522010
Crack-free AlGaN for solar-blind focal plane arrays through reduced area epitaxy
E Cicek, R McClintock, Z Vashaei, Y Zhang, S Gautier, CY Cho, ...
Applied Physics Letters 102 (5), 2013
452013
AlxGa1−xN–based deep-ultraviolet 320×256 focal plane array
E Cicek, Z Vashaei, EK Huang, R McClintock, M Razeghi
Optics Letters 37 (5), 896-898, 2012
312012
Selective growth of Zn-and O-polar ZnO layers by plasma-assisted molecular beam epitaxy
T Minegishi, JH Yoo, H Suzuki, Z Vashaei, K Inaba, K Shim, T Yao
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005
312005
AlxGa1− xN–based deep-ultraviolet 320× 256 focal plane array
E Cicek, Z Vashaei, EK Huang, R McClintock, M Razeghi
Opt. Lett 37 (5), 896-898, 2012
262012
Application of FIB system to ultra-high-pressure Earth science
M Miyahara, T Sakai, E Ohtani, Y Kobayashi, S Kamada, T Kondo, ...
Journal of Mineralogical and Petrological Sciences 103 (2), 88-93, 2008
252008
Structural characterization of MgxZn1− xO/ZnO heterostructures
Z Vashaei, T Minegishi, T Yao
Journal of crystal growth 306 (2), 269-275, 2007
242007
Photoluminescence characteristics of polar and nonpolar AlGaN/GaN superlattices
Z Vashaei, C Bayram, P Lavenus, M Razeghi
Applied Physics Letters 97 (12), 2010
182010
Reliable GaN-based resonant tunneling diodes with reproducible room-temperature negative differential resistance
C Bayram, DK Sadana, Z Vashaei, M Razeghi
Quantum Sensing and Nanophotonic Devices IX 8268, 482-490, 2012
172012
Defect and interface studies of ZnO/MgxZn1− xO heterostructures
Z Vashaei, T Minegishi, H Suzuki, MW Cho, T Yao
Journal of Physics and Chemistry of Solids 69 (2-3), 497-500, 2008
122008
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Articles 1–20