Follow
Fatimah Arofiati Noor
Fatimah Arofiati Noor
Verified email at fi.itb.ac.id
Title
Cited by
Cited by
Year
Electron and hole components of tunneling currents through an interfacial oxide-high- gate stack in metal-oxide-semiconductor capacitors
FA Noor, M Abdullah, Sukirno, Khairurrijal, A Ohta, S Miyazaki
Journal of Applied Physics 108 (9), 093711, 2010
332010
Comparison of electron transmittances and tunneling currents in an anisotropic TiNx/HfO2/SiO2/p-Si (100) metal—oxide—semiconductor (MOS) capacitor calculated using …
FA Noor, M Abdullah
Journal of Semiconductors 31 (12), 124002, 2010
172010
Comparison of electron transmittances and tunneling currents in an anisotropic TiN {sub x}/HfO {sub 2}/SiO {sub 2}/p-Si (100) metal-oxide-semiconductor (MOS) capacitor …
FA Noor, M Abdullah
Journal of Semiconductors 31, 2010
162010
Nanocomposite Solar Cells from"< emph type=" 1"> Dirty</emph>"< formula>< roman> TiO</roman>< inf> 2</inf></formula> Nanoparticles
S Saehana, R Prasetyowati, MI Hidayat, FA Noor, M Abdullah
AIP Conference Proceedings 1284 (1), 2010
132010
Numerical simulation of tunneling current in an anisotropic metal-oxide-semiconductor capacitor
FA Noor, F Iskandar, M Abdullah
TELKOMNIKA Indonesian Journal of Electrical Engineering 10 (3), 477-485, 2012
92012
Simulation of Dirac Tunneling Current of an Armchair Graphene Nanoribbon-Based pn Junction Using a Transfer Matrix Method
E Suhendi, R Syariati, FA Noor, N Kurniasih
Advanced Materials Research 974, 205-209, 2014
82014
Comparison of electron direct transmittance and tunneling time of Si (100)/HfO2/Si (100) and Si (110)/HfO2/Si (110) structures with ultra-thin trapezoidal barrier
FA Noor, M Abdullah, S Sukirno, K Khairurrijal
Indonesian Journal of Physics 18 (2), 41-45, 2007
72007
Sukirno, and Khairurrijal, Indonesian J
FA Noor, M Abdullah
Phys 18, 41, 2007
72007
Effect of the number of nitrogen dopants on the electronic and magnetic properties of graphitic and pyridinic N-doped graphene–a density-functional study
EB Yutomo, FA Noor, T Winata
RSC Advances 11 (30), 18371-18380, 2021
62021
Band gap calculations of bilayer graphene and bilayer armchair graphene nanoribbon
E Sustini, FA Noor, R Syariati
IOP Conference Series: Materials Science and Engineering 367 (1), 012013, 2018
62018
Model of a tunneling current in a pn junction based on armchair graphene nanoribbons-an Airy function approach and a transfer matrix method
E Suhendi, R Syariati, FA Noor, N Kurniasih, Khairurrijal
AIP Conference Proceedings 1589 (1), 91-94, 2014
62014
Verification of theoretical model for collector current in SiGe-based heterojunction bipolar transistors
L Hasanah, FA Noor, CU Jung, K Khairurrijal
Electronics letters 49 (21), 1347-1348, 2013
62013
Structural characteristics of carbon nanotubes fabricated using simple spray pyrolysis method
K Khairurrijal, M Abdullah, M Rosi, FA Noor
Indonesian Journal of Physics 19 (3), 91-95, 2008
62008
Simulation of Drain Currents of Double Gated Armchair Graphene Nanoribbon Field-Effect Transistors by Solving Dirac" Like" Equation and Using Transfer Matrix Method
E Suhendi, R Syariati, FA Noor, N Kurniasih
Journal of Physics: Conference Series 539 (1), 012020, 2014
52014
Modeling of Drain Current in Armchair Graphene Nanoribbon Field Effect Transistor Using Transfer Matrix Method
E Suhendi, FA Noor, N Kurniasih, K Khairurrijal
Advanced Materials Research 896, 367-370, 2014
52014
A Theoretical Model of Band-to-Band Tunneling Current in an Armchair Graphene Nanoribbon Tunnel Field-Effect Transistor
CSP Bimo, FA Noor, M Abdullah, K Khairurrijal
Advanced Materials Research 896, 371-374, 2014
52014
Analysis of electron leakage current in MOS capacitors by using anisotropic and isotropic mass approaches
FA Noor, F Iskandar, M Abdullah
Electronics letters 48 (25), 1585-1586, 2012
52012
A compact model for gate tunneling currents in undoped cylindrical surrounding-gate metal-oxide-semiconductor field-effect transistors
FA Noor, C Bimo, I Syuhada, T Winata, K Khairurrijal
Microelectronic Engineering 216, 111086, 2019
42019
Comparison of tunneling currents in graphene nanoribbon tunnel field effect transistors calculated using Dirac-like equation and Schrödinger's equation
E Suhendi, L Hasanah, D Rusdiana, FA Noor, N Kurniasih
Journal of Semiconductors 40 (6), 062002, 2019
42019
The effects of insulator thickness and substrate doping density on the performance of ZnO/SiO2/n-Si solar cells
FA Noor, F Oktasendra, E Sustini, K Khairurrijal
Materials Technology 33 (14), 865-871, 2018
42018
The system can't perform the operation now. Try again later.
Articles 1–20