Hsinyu Tsai
Hsinyu Tsai
Research Staff Member, IBM
Verified email at us.ibm.com
Cited by
Cited by
Equivalent-accuracy accelerated neural-network training using analogue memory
S Ambrogio, P Narayanan, H Tsai, RM Shelby, I Boybat, C Di Nolfo, ...
Nature 558 (7708), 60-67, 2018
Confining light to deep subwavelength dimensions to enable optical nanopatterning
TL Andrew, HY Tsai, R Menon
Science 324 (5929), 917-921, 2009
Chemoepitaxy etch trim using a self aligned hard mask for metal line to via
M Brink, MA Guillorn, CH Lin, H Tsai
US Patent 9,646,883, 2017
Two-Dimensional Pattern Formation Using Graphoepitaxy of PS-b-PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication
H Tsai, JW Pitera, H Miyazoe, S Bangsaruntip, SU Engelmann, CC Liu, ...
ACS nano 8 (5), 5227-5232, 2014
Absorbance-modulation optical lithography
R Menon, HI Smith
JOSA A 23 (9), 2290-2294, 2006
Recent progress in analog memory-based accelerators for deep learning
H Tsai, S Ambrogio, P Narayanan, RM Shelby, GW Burr
Journal of Physics D: Applied Physics 51 (28), 283001, 2018
Large-scale plasmonic microarrays for label-free high-throughput screening
TY Chang, M Huang, AA Yanik, HY Tsai, P Shi, S Aksu, MF Yanik, H Altug
Lab on a Chip 11 (21), 3596-3602, 2011
Far-field generation of localized light fields using absorbance modulation
R Menon, HY Tsai, SW Thomas III
Physical review letters 98 (4), 043905, 2007
Directed self-assembly of block copolymers for 7 nanometre FinFET technology and beyond
CC Liu, E Franke, Y Mignot, R Xie, CW Yeung, J Zhang, C Chi, C Zhang, ...
Nature Electronics 1 (10), 562-569, 2018
Design of diffractive lenses that generate optical nulls without phase singularities
R Menon, P Rogge, HY Tsai
JOSA A 26 (2), 297-304, 2009
Sub-30 nm pitch line-space patterning of semiconductor and dielectric materials using directed self-assembly
HY Tsai, H Miyazoe, S Engelmann, B To, E Sikorski, J Bucchignano, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2012
Confined PCM-based analog synaptic devices offering low resistance-drift and 1000 programmable states for deep learning
W Kim, RL Bruce, T Masuda, GW Fraczak, N Gong, P Adusumilli, ...
2019 Symposium on VLSI Technology, T66-T67, 2019
Tone inversion of self-assembled self-aligned structures
MA Guillorn, SJ Holmes, C Liu, H Miyazoe, H Tsai
US Patent 8,771,929, 2014
Towards electrical testable SOI devices using Directed Self-Assembly for fin formation
CC Liu, C Estrada-Raygoza, H He, M Cicoria, V Rastogi, N Mohanty, ...
Alternative Lithographic Technologies VI 9049, 904909, 2014
Computational aspects of optical lithography extension by directed self-assembly
K Lai, C Liu, J Pitera, DJ Dechene, A Schepis, J Abdallah, H Tsai, ...
Optical Microlithography XXVI 8683, 868304, 2013
Fabrication of spiral-phase diffractive elements using scanning-electron-beam lithography
HY Tsai, HI Smith, R Menon
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
Resistivity of copper interconnects beyond the 7 nm node
A Pyzyna, R Bruce, M Lofaro, H Tsai, C Witt, L Gignac, M Brink, M Guillorn, ...
2015 Symposium on VLSI Technology (VLSI Technology), T120-T121, 2015
Perspective on training fully connected networks with resistive memories: Device requirements for multiple conductances of varying significance
G Cristiano, M Giordano, S Ambrogio, LP Romero, C Cheng, ...
Journal of Applied Physics 124 (15), 151901, 2018
Reduction of focal-spot size using dichromats in absorbance modulation
HY Tsai, HI Smith, R Menon
Optics letters 33 (24), 2916-2918, 2008
Reducing the impact of phase-change memory conductance drift on the inference of large-scale hardware neural networks
S Ambrogio, M Gallot, K Spoon, H Tsai, C Mackin, M Wesson, ...
2019 IEEE International Electron Devices Meeting (IEDM), 6.1. 1-6.1. 4, 2019
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