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Haizheng Song
Haizheng Song
Verified email at engr.sc.edu
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Year
Aerosol-assisted MOCVD growth of Gd2O3-doped CeO2 thin SOFC electrolyte film on anode substrate
S H. Z., W H. B., ZHA S. W., P D. K., M G. Y.
Solid State Ionics 156, 249-254, 2003
1092003
Application of novel aerosol-assisted chemical vapor deposition techniques for SOFC thin films
G Meng, H Song, Q Dong, D Peng
Solid State Ionics 175 (1-4), 29-34, 2004
572004
Synthesis and characterization of volatile metal β-diketonate chelates of M (DPM) n (M= Ce, Gd, Y, Zr, n= 3, 4) used as precursors for MOCVD
H Song, Y Jiang, C Xia, G Meng, D Peng
Journal of Crystal Growth 250 (3-4), 423-430, 2003
452003
Progress in ion-transport inorganic membranes by novel chemical vapor deposition (CVD) techniques
GY Meng, HZ Song, HB Wang, CR Xia, DK Peng
Thin solid films 409 (1), 105-111, 2002
422002
Interface trap-induced nonideality in as-deposited Ni/4H-SiC Schottky barrier diode
SU Omar, TS Sudarshan, TA Rana, H Song, MVS Chandrashekhar
IEEE Transactions on Electron Devices 62 (2), 615-621, 2014
402014
Aerosol-assisted MOCVD deposition of YDC thin films on (NiO+ YDC) substrates
HB Wang, HZ Song, CR Xia, DK Peng, GY Meng
Materials research bulletin 35 (14-15), 2363-2370, 2000
392000
Basal plane dislocation conversion near the epilayer/substrate interface in epitaxial growth of 4 off-axis 4H–SiC
H Song, TS Sudarshan
Journal of Crystal Growth 371, 94-101, 2013
382013
Decomposition Behavior of M(DPM)n (DPM = 2,2,6,6-Tetramethyl-3,5-heptanedionato; n = 2, 3, 4)
Y Jiang, M Liu, Y Wang, H Song, J Gao, G Meng
The Journal of Physical Chemistry A 110 (50), 13479-13486, 2006
342006
Investigations of defect evolution and basal plane dislocation elimination in CVD epitaxial growth of silicon carbide on eutectic etched epilayers
H Song, T Rana, TS Sudarshan
Journal of crystal growth 320 (1), 95-102, 2011
312011
Novel CVD techniques for Micro‐and IT‐SOFC fabrication
G Meng, H Song, C Xia, X Liu, D Peng
Fuel Cells 4 (1‐2), 48-55, 2004
302004
Properties characterization of Ce (DPM) 4 served as precursor for MOCVD
HZ Song, HB Wang, J Zhang, DK Peng, GY Meng
Materials research bulletin 37 (8), 1487-1497, 2002
272002
Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: testing the limits of Tung's model
SU Omar, TS Sudarshan, TA Rana, H Song, MVS Chandrashekhar
Journal of Physics D: Applied Physics 47 (29), 295102, 2014
262014
Preparation of Gd2O3 doped CeO2 thin films by oxy-acetylene combustion assisted aerosol-chemical vapor deposition technique on various substrates and zone model for microstructure
H Song, C Xia, G Meng, D Peng
Thin Solid Films 434 (1-2), 244-249, 2003
222003
Deposition of Y2O3 stabilized ZrO2 thin films from Zr (DPM) 4 and Y (DPM) 3 by aerosol-assisted MOCVD
H Song, C Xia, Y Jiang, G Meng, D Peng
Materials Letters 57 (24-25), 3833-3838, 2003
212003
4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth
A Balachandran, H Song, TS Sudarshan, MVS Chandrashekhar
Journal of Crystal Growth 448, 97-104, 2016
202016
Effect of surface misorientation on the kinetics of GaAs MOVPE examined using selective area growth
H Song, X Song, M Sugiyama, Y Nakano, Y Shimogaki
Electrochemical and solid-state letters 9 (3), G104, 2006
202006
Synthesis and characterization of Sm (DPM) 3 used as precursor for MOCVD
Y Jiang, H Song, L Li, W Bao, G Meng
Journal of crystal growth 267 (1-2), 256-262, 2004
202004
Nonlinear kinetics of GaAs MOVPE examined by selective area growth technique
H Song, M Sugiyama, Y Nakano, Y Shimogaki
Journal of the Electrochemical Society 154 (2), H91, 2006
192006
Glide of threading edge dislocations after basal plane dislocation conversion during 4H–SiC epitaxial growth
M Abadier, H Song, TS Sudarshan, YN Picard, M Skowronski
Journal of Crystal Growth 418, 7-14, 2015
182015
Deposition of Sm2O3 doped CeO2 thin films from Ce (DPM) 4 and Sm (DPM) 3 (DPM= 2, 2, 6, 6-tetramethyl-3, 5-heptanedionato) by aerosol-assisted metal–organic chemical vapor …
Y Jiang, H Song, Q Ma, G Meng
Thin solid films 510 (1-2), 88-94, 2006
182006
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