Maryam shayesteh
Maryam shayesteh
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Organo-arsenic molecular layers on silicon for high-density doping
J O’Connell, GA Verni, A Gangnaik, M Shayesteh, B Long, YM Georgiev, ...
ACS applied materials & interfaces 7 (28), 15514-15521, 2015
Optimized laser thermal annealing on germanium for high dopant activation and low leakage current
M Shayesteh, D O’Connell, F Gity, P Murphy-Armando, R Yu, K Huet, ...
IEEE Transactions on Electron Devices 61 (12), 4047-4055, 2014
Defect evolution and dopant activation in laser annealed Si and Ge
F Cristiano, M Shayesteh, R Duffy, K Huet, F Mazzamuto, Y Qiu, M Quillec, ...
Materials Science in Semiconductor Processing 42, 188-195, 2016
Device design and estimated performance for p-type junctionless transistors on bulk germanium substrates
R Yu, S Das, I Ferain, P Razavi, M Shayesteh, A Kranti, R Duffy, ...
IEEE transactions on electron devices 59 (9), 2308-2313, 2012
The curious case of thin-body Ge crystallization
R Duffy, M Shayesteh, B McCarthy, A Blake, M White, J Scully, R Yu, ...
Applied Physics Letters 99 (13), 131910, 2011
Impact ionization induced dynamic floating body effect in junctionless transistors
R Yu, AN Nazarov, VS Lysenko, S Das, I Ferain, P Razavi, M Shayesteh, ...
Solid-state electronics 90, 28-33, 2013
The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization
R Duffy, M Shayesteh, M White, J Kearney, AM Kelleher
Applied Physics Letters 96 (23), 231909, 2010
Atomically flat low-resistive germanide contacts formed by laser thermal anneal
M Shayesteh, K Huet, I Toqué-Tresonne, R Negru, CLM Daunt, N Kelly, ...
IEEE transactions on electron devices 60 (7), 2178-2185, 2013
NiGe contacts and junction architectures for P and As doped germanium devices
M Shayesteh, CLM Daunt, D O'Connell, V Djara, M White, B Long, R Duffy
IEEE transactions on electron devices 58 (11), 3801-3807, 2011
Molecular Layer Doping: Non-destructive doping of silicon and germanium
B Long, GA Verni, J O'Connell, J Holmes, M Shayesteh, D O'Connell, ...
2014 20th International Conference on Ion Implantation Technology (IIT), 1-4, 2014
Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion
R Duffy, M Shayesteh, K Thomas, E Pelucchi, R Yu, A Gangnaik, ...
Journal of Materials Chemistry C 2 (43), 9248-9257, 2014
Junctionless nanowire transistor fabricated with high mobility Ge channel
R Yu, YM Georgiev, S Das, RG Hobbs, IM Povey, N Petkov, M Shayesteh, ...
physica status solidi (RRL)–Rapid Research Letters 8 (1), 65-68, 2014
Problems of n-type doped regions in germanium, their solutions, and how to beat the ITRS roadmap
R Duffy, M Shayesteh, M White, J Kearney, AM Kelleher
ECS Transactions 35 (2), 185, 2011
Doping top-down e-beam fabricated germanium nanowires using molecular monolayers
B Long, GA Verni, J O’Connell, M Shayesteh, A Gangnaik, YM Georgiev, ...
Materials Science in Semiconductor Processing 62, 196-200, 2017
Germanium doping challenges
R Duffy, M Shayesteh, I Kazadojev, R Yu
2013 13th International Workshop on Junction Technology (IWJT), 16-21, 2013
Germanium Doping, Contacts, and Thin-Body Structures
R Duffy, M Shayesteh
ECS Transactions 45 (4), 189, 2012
FinFET doping; material science, metrology, and process modeling studies for optimized device performance
R Duffy, M Shayesteh
AIP Conference Proceedings 1321 (1), 17-22, 2011
Modelling the effect of slave laser gain and frequency comb spacing on the selective amplification of injection locked semiconductor lasers
KJ Shortiss, M Shayesteh, FH Peters
Optical and Quantum Electronics 50 (1), 1-9, 2018
RF plasma treatment of shallow ion-implanted layers of germanium
PN Okholin, VI Glotov, AN Nazarov, VO Yuchymchuk, VP Kladko, ...
Materials Science in Semiconductor Processing 42, 204-209, 2016
Fluorine implantation in germanium for dopant diffusion control
M Shayesteh, V Djara, M Schmidt, M White, AM Kelleher, R Duffy
AIP Conference Proceedings 1496 (1), 115-118, 2012
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