Superresolution Microscopy of Single Rare-Earth Emitters in YAG and Centers in Diamond R Kolesov, S Lasse, C Rothfuchs, AD Wieck, K Xia, T Kornher, ...
Physical Review Letters 120 (3), 033903, 2018
21 2018 Temperature and bias anomalies in the photoluminescence of InAs quantum dots coupled to a Fermi reservoir AR Korsch, GN Nguyen, M Schmidt, C Ebler, SR Valentin, P Lochner, ...
Physical Review B 99 (16), 165303, 2019
9 2019 Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots C Rothfuchs, N Kukharchyk, T Koppe, F Semond, S Blumenthal, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2016
5 2016 Altering the luminescence properties of self-assembled quantum dots in GaAs by focused ion beam implantation C Rothfuchs, N Kukharchyk, MK Greff, AD Wieck, A Ludwig
Applied Physics B 122, 1-6, 2016
5 2016 Modification of InAs and GaN quantum dots by ion beam implantation C Rothfuchs
1 2017 Ion-induced interdiffusion of surface GaN quantum dots C Rothfuchs, F Semond, M Portail, O Tottereau, A Courville, AD Wieck, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2017
1 2017 Modeling Electrochemical Etching of Proton Irradiated p-GaAs for the Design of MEMS Building Blocks T Koppe, C Rothfuchs, M Schulte-Borchers, H Hofsäss, H Boudinov, ...
Journal of microelectromechanical systems 23 (4), 955-960, 2014
1 2014