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Aziz, M. N I A
Aziz, M. N I A
Centre for Telecommunication Research and Innovation, Faculty of Electronics and Computer
Verified email at student.utem.edu.my
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Cited by
Cited by
Year
Ethnopharmacological, phytochemical and pharmacognostic potential of genus Heliotropium L
MK Ghori, MA Ghaffari, SN Hussain, M Manzoor, M Aziz, W Sarwer
Turk. J. Pharm. Sci 13 (1), 143-68, 2016
262016
Preliminary determination of asphalt properties using microwave techniques
M Aziz, R Muniandy, K Abdullah, AR Mahmud, K Khalid, A Ismail
Journal of Engineering & Applied Sciences 5 (11), 70-81, 2010
242010
TAGUCHI MODELING WITH THE INTERACTION TEST FOR HIGHER DRIVE CURRENT IN WSI^ sub X^/TIO^ sub 2^ CHANNEL VERTICAL DOUBLE GATE NMOS DEVICE
KE Kaharudin, F Salehuddin, ASM Zain, M Aziz
Journal of Theoretical and Applied Information Technology 90 (1), 185, 2016
152016
Optimization of process parameter variations on leakage current in in silicon-oninsulator vertical double gate mosfet device
KE Kaharudin, F Salehuddin, ASM Zain, MNI Abd Aziz
Journal of Mechanical Engineering and Sciences 9, 1614-1627, 2015
15*2015
Comparison of electrical characteristics between Bulk MOSFET and Silicon-on-insulator (SOI) MOSFET
MNIA Aziz, F Salehuddin, ASM Zain, KE Kaharudin, SA Radzi
Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 6 …, 2014
142014
Multi-response optimization in vertical double gate PMOS device using Taguchi method and grey relational analysis
KE Kaharudin, F Salehuddin, ASM Zain, M Aziz, Z Manap, NA Abd Salam, ...
2016 IEEE International Conference on Semiconductor Electronics (ICSE), 64-68, 2016
102016
Diacritic segmentation technique for arabic handwritten using region-based
AA Sheikh, MS Azmi, MA Aziz, MN Al-Mhiqani, SS Bafjaish
Indonesian Journal of Electrical Engineering and Computer Science 18 (1 …, 2020
72020
Application of Taguchi-based grey fuzzy logic for simultaneous optimization in TiO2/WSix-based vertical double-gate MOSFET
KE Kaharudin, F Salehuddin, ASM Zain, M Aziz
Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 9 …, 2017
72017
Impact of different dose, energy and tilt angle in source/drain implantation for vertical double gate PMOS device
KE Kaharudin, F Salehuddin, ASM Zain, MNI Abd Aziz
Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 8 …, 2016
62016
Comparison of Taguchi method and central composite design for optimizing process parameters in vertical double gate MOSFET
KE Kaharudin, F Salehuddin, ASM Zain, M Aziz
ARPN Journal of Engineering and Applied Sciences 12 (19), 5578-5590, 2017
52017
Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structure
KE Kaharudin, F Salehuddin, N Soin, ASM Zain, M Aziz, I Ahmad
ARPN Journal of Engineering and Applied Sciences 11 (21), 12328-12335, 2016
52016
Analyze of threshold voltage in SOI PMOSFET device using Taguchi method
M Aziz, F Salehuddin, ASM Zain, KE Kaharudin, H Hazura, SK Idris, ...
2016 IEEE International Conference on Semiconductor Electronics (ICSE), 97-100, 2016
32016
Design and optimization of TiSix/HfO2 channel vertical double gate NMOS device
KE Kaharudin, F Salehuddin, ASM Zain, M Aziz, Z Manap, NA Abd Salam, ...
2016 IEEE International Conference on Semiconductor Electronics (ICSE), 69-73, 2016
32016
Implementation of Taguchi method for lower drain induced barrier lowering in vertical double gate NMOS Device
KE Kaharudin, F Salehuddin, ASM Zain, MNIA Aziz
Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 8 …, 2016
32016
Variability analysis of process parameters on subthreshold swing in vertical DG-MOSFET device
KE Kaharudin, F Salehuddin, AH Hamidon, ASM Zain, MNI Abd Aziz, ...
ARPN Journal of Engineering and Applied Sciences 11 (5), 3137-3142, 2016
32016
Application of Taguchi Method for Lower Subthreshold Swing in Ultrathin Pillar SOI VDGMOSFET Device
KE Kaharudin, F Salehuddin, ASM Zain, M Aziz, I Ahmad
Journal of Advanced Research in Applied Sciences and Engineering Technology …, 2016
32016
Study of electrical characteristic for 50nm and 10nm SOI body thickness in MOSFET device
M Aziz, F Salehuddin, ASM Zain, KE Kaharuddin
Proceedings of Mechanical Engineering Research Day 2015, 43-44, 2015
32015
Electrical characteristics of PMOS bulk mosfet and pmos silicon-on-insulator (SOI) MOSFET device
MNI Abd Aziz, F Salehuddin, ASM Zain, KE Kaharudin
32006
Application of taguchi method with the interaction test for lower DIBL IN WSix/TiO2 channel vertical double gate NMOS
KE Kaharudin, F Salehuddin, ASM Zain, M Aziz, I Ahmad
ARPN J. Eng. Appl. Sci 11, 7093-103, 2016
22016
Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET Device
KE Kaharudin, F Salehuddin, ASM Zain, M Aziz, I Ahmad
ARPN Journal of Engineering and Applied Sciences 11 (6), 3838-3848, 2016
22016
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