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Rama Krushna Mahanty
Rama Krushna Mahanty
SOC Design engineer, Intel corporation
Verified email at intel.com - Homepage
Title
Cited by
Cited by
Year
Sensing and structural properties of Ti-doped tin oxide (SnO2) membrane for bio-sensor applications
APS Isabel, CH Kao, RK Mahanty, YCS Wu, CY Li, CY Lin, CF Lin
Ceramics International 43 (13), 10386-10391, 2017
262017
The role of oxygen plasma in the formation of oxygen defects in HfO x films deposited at room temperature
M Januar, SP Prakoso, SY Lan, RK Mahanty, SY Kuo, KC Liu
Journal of Materials Chemistry C 3 (16), 4104-4114, 2015
192015
Comparison of ZnO and Ti-doped ZnO sensing membrane applied in electrolyte-insulator-semiconductor structure
ML Lee, JC Wang, CH Kao, H Chen, CY Lin, CW Chang, RK Mahanty, ...
Ceramics International 44 (6), 6081-6088, 2018
132018
Physical and electrical properties of flash memory devices with nickel oxide (NiO2) charge trapping layer
ML Lee, H Chen, CH Kao, RK Mahanty, WK Sung, CF Lin, CY Lin, ...
Vacuum 140, 47-52, 2017
82017
Comparison of Physical and Electrical Characteristics of Memory Devices with NiO2 Charge Trapping Layer
RK Mahanty, CH Kao, CF Lin, YL Su
Electrochemical Society Meeting Abstracts 229, 2047-2047, 2016
2016
The MgO Sensing Membrane with CF4 Plasma Treatment in Biosensor Applications
CF Lin, CH Kao, CL Chang, YL Su, CS Liu, RK Mahanty
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Articles 1–6