Sub-10-nm tunnel field-effect transistor with graded Si/Ge heterojunction CH Shih, ND Chien IEEE Electron Device Letters 32 (11), 1498-1500, 2011 | 93 | 2011 |
Physical operation and device design of short-channel tunnel field-effect transistors with graded silicon-germanium heterojunctions CH Shih, N Dang Chien Journal of Applied Physics 113 (13), 2013 | 34 | 2013 |
Design and modeling of line-tunneling field-effect transistors using low-bandgap semiconductors CH Shih, ND Chien IEEE Transactions on Electron Devices 61 (6), 1907-1913, 2014 | 29 | 2014 |
Short-channel effect and device design of extremely scaled tunnel field-effect transistors ND Chien, CH Shih Microelectronics Reliability 55 (1), 31-37, 2015 | 22 | 2015 |
Oxide Thickness-Dependent Effects of Source Doping Profile on the Performance of Single-and Double-Gate Tunnel Field-Effect Transistors ND Chien, CH Shih Superlattices and Microstructures 102, 284-299, 2017 | 21 | 2017 |
Schottky barrier silicon nanowire SONOS memory with ultralow programming and erasing voltages CH Shih, W Chang, YX Luo, JT Liang, MK Huang, ND Chien, RK Shia, ... IEEE electron device letters 32 (11), 1477-1479, 2011 | 19 | 2011 |
Physical properties and analytical models of band-to-band tunneling in low-bandgap semiconductors CH Shih, N Dang Chien Journal of Applied Physics 115 (4), 2014 | 17 | 2014 |
Neutron transition strengths of 2 1+ states in the neutron-rich oxygen isotopes determined from inelastic proton scattering ND Chien, DT Khoa Physical Review C 79 (3), 034314, 2009 | 17 | 2009 |
A source-side injection lucky electron model for schottky barrier metal–oxide–semiconductor devices CH Shih, JT Liang, JS Wang, ND Chien IEEE electron device letters 32 (10), 1331-1333, 2011 | 16 | 2011 |
Drive current enhancement in tunnel field-effect transistors by graded heterojunction approach ND Chien Journal of Applied Physics 114 (9), 2013 | 15 | 2013 |
Short channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions ND Chien, CH Shih Superlattices and Microstructures 100, 857-866, 2016 | 13 | 2016 |
Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios CH Shih, ND Chien, HD Tran, P Van Chuan Applied Physics A 126, 1-11, 2020 | 6 | 2020 |
Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain JK Hsia, CH Shih, TS Kang, ND Chien, N Van Kien 2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013 | 6 | 2013 |
Dependence of short-channel effects on semiconductor bandgap in tunnel field-effect transistors ND Chien, CH Shih, HJ Teng, CK Pham Journal of physics: conference series 1034 (1), 012003, 2018 | 5 | 2018 |
Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors ND Chien, CH Shih, PC Hoa, NH Minh, DTT Hien Journal of Physics: Conference Series 726 (1), 012002, 2016 | 5 | 2016 |
Increasing drain voltage of low-bandgap tunnel field-effect transistors by drain engineering ND Chien, CH Shih, YH Chen, NT Thu International Conference on Electronics, Information and Communication, 1-4, 2016 | 5 | 2016 |
Quantum confinement effect in strained-Si1−xGexdouble-gate tunnel field-effect transistors ND Chien, CH Shih, LT Vinh, N Van Kien Proceedings of 2013 International Conference on IC Design & Technology …, 2013 | 5 | 2013 |
Proper determination of tunnel model parameters for indirect band-to-band tunneling in compressively strained Si1−xGexTFETs ND Chien, LT Vinh, N Van Kien, JK Hsia, TS Kang, CH Shih 2013 International Symposium on Next-Generation Electronics, 67-70, 2013 | 5 | 2013 |
Device physics and design of symmetrically doped tunnel field-effect transistors ND Chien, TTK Anh, YH Chen, CH Shih Microelectronic Engineering 216, 111061, 2019 | 4 | 2019 |
On-current limitation of high-k gate insulator MOSFETs CH Shih, JS Wang, ND Chien, RK Shia Solid-state electronics 78, 87-91, 2012 | 4 | 2012 |