| 3D GaN nanoarchitecture for field-effect transistors MF Fatahilah, K Strempel, F Yu, S Vodapally, A Waag, HS Wasisto Micro and Nano Engineering 3, 59-81, 2019 | 47 | 2019 |
| Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics MF Fatahilah, F Yu, K Strempel, F Römer, D Maradan, M Meneghini, ... Scientific reports 9, 2019 | 44 | 2019 |
| Normally Off Vertical 3-D GaN Nanowire MOSFETs With Inverted-GaN Channel F Yu, K Strempel, MF Fatahilah, H Zhou, F Römer, A Bakin, B Witzigmann, ... IEEE Transactions on Electron Devices 65 (6), 2439-2445, 2018 | 40 | 2018 |
| Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3 gate insulator M Ruzzarin, C De Santi, F Yu, MF Fatahilah, K Strempel, HS Wasisto, ... Applied Physics Letters 117 (20), 2020 | 17 | 2020 |
| Performance analysis and simulation of vertical gallium nitride nanowire transistors B Witzigmann, F Yu, K Frank, K Strempel, MF Fatahilah, HW Schumacher, ... Solid-State Electronics 144, 73-77, 2018 | 15 | 2018 |
| Traceable Nanomechanical Metrology of GaN Micropillar Array MF Fatahilah, P Puranto, F Yu, J Langfahl‐Klabes, A Felgner, Z Li, M Xu, ... Advanced Engineering Materials, 2018 | 14 | 2018 |
| Nanofabrication of vertically aligned 3D GaN nanowire arrays with sub-50 nm feature sizes using nanosphere lift-off lithography T Granz, S Mariana, G Hamdana, F Yu, MF Fatahilah, IM Clavero, ... Proceedings 1 (4), 309, 2017 | 7 | 2017 |
| Demonstration of UV-induced threshold voltage instabilities in vertical GaN nanowire array-based transistors M Ruzzarin, M Meneghini, C de Santi, A Neviani, F Yu, K Strempel, ... IEEE Transactions on Electron Devices 66 (5), 2119-2124, 2019 | 5 | 2019 |
| Ultra Low Power Mass-Producible Gas Sensor Based on Efficient Self-Heated GaN Nanorods N Markiewicz, O Casals, MF Fatahilah, J Xu, A Schmidt, HS Wasisto, ... 2019 20th International Conference on Solid-State Sensors, Actuators and …, 2019 | 4 | 2019 |
| MicroLEDs: high precision large scale UV laser lift-off and mass transfer processes O Haupt, J Brune, M Fatahilah, R Delmdahl Laser-based Micro-and Nanoprocessing XVI 11989, 140-146, 2022 | 3 | 2022 |
| Thermal performance analysis of GaN nanowire and fin-shaped power transistors based on self-consistent electrothermal simulations H Kamrani, F Yu, K Frank, K Strempel, MF Fatahilah, HS Wasisto, ... Microelectronics Reliability 91, 227-231, 2018 | 3 | 2018 |
| Micro and Nano Engineering MF Fatahilah, K Strempel, F Yu, S Vodapally, A Waag, HS Wasisto | 2 | 2019 |
| Top-down fabrication of arrays of vertical GaN nanorods with freestanding top contacts for environmental exposure N Markiewicz, O Casals, MF Fatahilah, K Strempel, A Gad, HS Wasisto, ... Proceedings 2 (1), 2018 | 1 | 2018 |
| Vertical 3D GaN Nanoarchitectures towards an Integrated Optoelectronic Biosensing Platform in Microbial Fuel Cells H Boht, H Wichmann, G Scholz, F Yu, K Strempel, S Mariana, ... Proceedings 1 (4), 508, 2017 | 1 | 2017 |
| 67‐3: Numerical Simulation for GaN‐based MicroLED Laser Induced Forward Transfer (LIFT) and Comparison With Real‐Time Measurements of the Flight Phase U Eppelt, M Fatahilah, J Brune, O Haupt SID Symposium Digest of Technical Papers 54 (1), 954-957, 2023 | | 2023 |
| Investigation of Electrical Behaviors Observed in Vertical GaN Nanowire Transistors Using Extended Landauer-Büttiker Formula FA Noor, I Syuhada, T Winata, F Yu, MF Fatahilah, HS Wasisto, ... IEEE Access 9, 2913-2923, 2020 | | 2020 |
| Efficient Self-Heating in Gallium Nitride Nanopillars for Ultra-Low-Power Mass-Producible Gas Sensors N Markiewicz, O Casals, J Xu, MF Fatahilah, A Schmidt, HS Wasisto, ... 2019 IEEE International Symposium on Olfaction and Electronic Nose (ISOEN), 1-3, 2019 | | 2019 |
| Investigation of Electrical Behaviors Observed in Vertical GaN Nanowire Transistors Using Extended Landauer-Büttiker Formula MF FATAHILAH, HS WASISTO | | |
