Short-channel effects in tunnel FETs J Wu, J Min, Y Taur
IEEE Transactions on Electron Devices 62 (9), 3019-3024, 2015
106 2015 Small molecule accurate recognition technology (SMART) to enhance natural products research C Zhang, Y Idelbayev, N Roberts, Y Tao, Y Nannapaneni, BM Duggan, ...
Scientific reports 7 (1), 14243, 2017
94 2017 A Short-Channel – Model for 2-D MOSFETs Y Taur, J Wu, J Min
IEEE Transactions on Electron Devices 63 (6), 2550-2555, 2016
59 2016 An analytic model for heterojunction tunnel FETs with exponential barrier Y Taur, J Wu, J Min
IEEE Transactions on Electron Devices 62 (5), 1399-1404, 2015
54 2015 Analysis of source doping effect in tunnel FETs with staggered bandgap J Min, J Wu, Y Taur
IEEE Electron Device Letters 36 (10), 1094-1096, 2015
53 2015 Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN S Gu, EA Chagarov, J Min, S Madisetti, S Novak, S Oktyabrsky, AJ Kerr, ...
Applied surface science 317, 1022-1027, 2014
33 2014 Dimensionality dependence of TFET performance down to 0.1 V supply voltage Y Taur, J Wu, J Min
IEEE Transactions on Electron Devices 63 (2), 877-880, 2015
21 2015 Projected performance of heterostructure tunneling FETs in low power microwave and mm-wave applications PM Asbeck, K Lee, J Min
IEEE Journal of the Electron Devices Society 3 (3), 122-134, 2015
18 2015 Carrier sheet density constrained anomalous current saturation of graphene field effect transistors: kinks and negative differential resistances X Wang, H Xu, J Min, LM Peng, JB Xu
Nanoscale 5 (7), 2811-2817, 2013
13 2013 Characterization of interface defects in ALD Al2O3/p-GaSb MOS capacitors using admittance measurements in range from kHz to GHz S Gu, J Min, Y Taur, PM Asbeck
Solid-State Electronics 118, 18-25, 2016
11 2016 Thermal resistance extraction of AlGaN/GaN depletion-mode HEMTs on diamond J Wu, J Min, W Lu, PKL Yu
Journal of Electronic Materials 44, 1275-1280, 2015
10 2015 Compact modeling of distributed effects in 2-D vertical tunnel FETs and their impact on DC and RF performances J Min, PM Asbeck
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 3 …, 2017
6 2017 An analytic model for heterojunction and homojunction tunnel FETs with 3D density of states J Wu, J Min, J Ji, Y Taur
2015 73rd Annual Device Research Conference (DRC), 249-250, 2015
4 2015 Super-linear rectifying property of rubrene single crystal devices C Wang, X Wang, J Min, N Zhao, J Xu
Organic Electronics 12 (10), 1731-1735, 2011
4 2011 Analysis of Temperature Dependent Effects on I–V Characteristics of Heterostructure Tunnel Field Effect Transistors J Min, LD Wang, J Wu, PM Asbeck
IEEE Journal of the Electron Devices Society 4 (6), 416-423, 2016
3 2016 Physical and compact modeling of vertical and lateral tunnel field effect transistors J Min
University of California, San Diego, 2017
2 2017 Author Correction: Small Molecule Accurate Recognition Technology (SMART) to Enhance Natural Products Research C Zhang, Y Idelbayev, N Roberts, Y Tao, Y Nannapaneni, BM Duggan, ...
Scientific reports 10, 2020
1 2020 Small Molecule Accurate Recognition Technology (SMART) to Enhance Natural Products Research (vol 7, 14243, 2017) C Zhang, Y Idelbayev, N Roberts, Y Tao, Y Nannapaneni, BM Duggan, ...
SCIENTIFIC REPORTS 10 (1), 2020
2020