Ikuti
Fauziyah Salehuddin, F.Salehuddin, S.Fauziyah,
Fauziyah Salehuddin, F.Salehuddin, S.Fauziyah,
Email yang diverifikasi di utem.edu.my
Judul
Dikutip oleh
Dikutip oleh
Tahun
The evolution of non-invasive blood glucose monitoring system for personal application
NAB Abd Salam, WH bin Mohd Saad, ZB Manap, F Salehuddin
Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 8 …, 2016
672016
Homes appliances controlled using speech recognition in wireless network environment
MKN Shahida, B Mardiana, H Hazura, S Fauziyah, M Zahariah, AR Hanim
2009 International Conference on Computer Technology and Development 2, 285-288, 2009
292009
Signature verification system using support vector machine
S Fauziyah, O Azlina, B Mardiana, AM Zahariah, H Haroon
2009 6th International Symposium on Mechatronics and its Applications, 1-4, 2009
242009
Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor
I Ahmad, S Shaari, HA Elgomati, F Salehuddin
Journal of Physics: Conference Series 431 (1), 012026, 2013
222013
Application of Taguchi Method in Optimization of Gate Oxide and Silicide Thickness for 45nm NMOS Device
IA Fauziyah Salehuddin, FA Hamid, A Zaharim
International Journal of Engineering & Technology (IJET) 9 (10), 94-98, 2009
222009
Development of LPG leakage detector system using arduino with Internet of Things (IoT)
MA Hannan, ASM Zain, F Salehuddin, H Hazura, SK Idris, AR Hanim, ...
Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 10 …, 2018
182018
Design and optimization approaches in double gate device architecture
KE Kaharudin, AH Hamidon, F Salehuddin
International Journal of Engineering and Technology (IJET) 6 (5), 2070-2079, 2014
182014
Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device
F Salehuddin, I Ahmad, FA Hamid, A Zaharim, U Hashim, PR Apte
International Journal of the Physical Sciences 6 (30), 7026-7034, 2011
172011
Comprehensive identification of sensitive and stable ISFET sensing layer high-k gate based on ISFET/electrolyte models
AM Dinar, ASM Zain, F Salehuddin
Int. J. Electr. Comput. Eng 9 (2), 926-933, 2019
162019
Modeling and simulation of electrolyte pH change in conventional ISFET using commercial Silvaco TCAD
AM Dinar, ASM Zain, F Salehuddin, ML Attiah, MK Abdulhameed
IOP Conference series: materials science and engineering 518 (4), 042020, 2019
152019
TAGUCHI MODELING WITH THE INTERACTION TEST FOR HIGHER DRIVE CURRENT IN WSI^ sub X^/TIO^ sub 2^ CHANNEL VERTICAL DOUBLE GATE NMOS DEVICE
KE Kaharudin, F Salehuddin, ASM Zain, M Aziz
Journal of Theoretical and Applied Information Technology 90 (1), 185, 2016
152016
Optimization of process parameter variations on leakage current in in silicon-oninsulator vertical double gate mosfet device
KE Kaharudin, F Salehuddin, ASM Zain, MNI Abd Aziz
Journal of Mechanical Engineering and Sciences 9, 1614-1627, 2015
15*2015
Comparison of electrical characteristics between Bulk MOSFET and Silicon-on-insulator (SOI) MOSFET
MNIA Aziz, F Salehuddin, ASM Zain, KE Kaharudin, SA Radzi
Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 6 …, 2014
142014
Online signature verification system
A Julita, S Fauziyah, O Azlina, B Mardiana, H Hazura, AM Zahariah
2009 5th International Colloquium on Signal Processing & Its Applications, 8-12, 2009
142009
Impact of Height of Silicon Pillar on Vertical DG-MOSFET Device
KE Kaharudin, AH Hamidon, F Salehuddin
International Journal of Computer, Electrical, Automation, Control and …, 2014
132014
Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal array
F Salehuddin, I Ahmad, FA Hamid, A Zaharim, AMA Hamid, PS Menon, ...
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE …, 2012
132012
Scaling down of the 32 nm to 22 nm gate length NMOS transistor
AHA Maheran, PS Menon, I Ahmad, HA Elgomati, BY Majlis, ...
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE …, 2012
132012
Design and optimization of 22nm NMOS transistor
AHA Maheran, PS Menon, I Ahmad, S Shaari, HA Elgomati, BY Majlis, ...
Australian Journal of Basic and Applied Sciences 6 (7), 1-8, 2012
132012
CMOS ISFET device for DNA sequencing: device compensation, application requirements and recommendations
AM Dinar, ASM Zain, F Salehuddin
Int. J. Appl. Eng. Res 12 (21), 11015-11028, 2017
122017
Analysis of process parameter effect on DIBL in n-channel MOSFET device using L27 orthogonal array
F Salehuddin, KE Kaharudin, ASM Zain, AKM Yamin, I Ahmad
AIP Conference Proceedings 1621 (1), 322-328, 2014
122014
Sistem tidak dapat melakukan operasi ini. Coba lagi nanti.
Artikel 1–20