Ibrahim ahmad
Ibrahim ahmad
Universiti Tenaga nasional, universiti kebangsaan Malaysia
Verified email at uniten.edu.my
Cited by
Cited by
Optimization of PV-wind-hydro-diesel hybrid system by minimizing excess capacity
JA Razak, K Sopian, Y Ali, MA Alghoul, A Zaharim, I Ahmad
European Journal of Scientific Research 25 (4), 663-671, 2009
Effect of wafer thinning methods towards fracture strength and topography of silicon die
HH Jiun, I Ahmad, A Jalar, G Omar
Microelectronics reliability 46 (5-6), 836-845, 2006
Solar absorption refrigeration system using new working fluid pairs
JM Abdulateef, K Sopian, MA Alghoul, MY Sulaiman, A Zaharim, I Ahmad
International journal of Energy 1 (3), 82-87, 2007
Fabrication and characterization of a 0.14 μm CMOS device using ATHENA and ATLAS simulators
I Ahmad, YK Ho, BY Majlis
Semiconductor Physics Quantum Electronics & Optoelectronics, 2006
Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor
AM AH, PS Menon, I Ahmad, S Shaari, HA Elgomati, F Salehuddin
Journal of Physics: Conference Series 431, 012026, 2013
HF etching of sacrificial spin-on glass in straight and junctioned microchannels for MEMS microstructure release
AA Hamzah, BY Majlis, I Ahmad
Journal of the Electrochemical Society 154 (8), D376, 2007
Simulation of fabrication process VDMOSFET transistor using Silvaco software
H Abdullah, J Jurait, A Lennie, ZM Nopiah, I Ahmad
European Journal of Scientific Research 29 (4), 461-470, 2009
Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor
AHA Maheran, PS Menon, I Ahmad, S Shaari
Materials Science in Semiconductor Processing 17, 155-161, 2014
Application of taguchi method in optimization of gate oxide and silicide thickness for 45nm nMOS device
IA Fauziyah Salehuddin, FA Hamid, A Zaharim
International Journal of Engineering & Technology (IJET) 9 (10), 94-98, 2009
Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device
F Salehuddin, I Ahmad, FA Hamid, A Zaharim, U Hashim, PR Apte
International Journal of Physical Sciences 6 (30), 7026-7034, 2011
Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi method
AHA Maheran, PS Menon, I Ahmad, S Shaari
Jurnal Teknologi (Sciences and Engineering) 68 (4), 45-49, 2014
The effects of multiple zincation process on aluminum bond pad surface for electroless nickel immersion gold deposition
MK Md Arshad, I Ahmad, A Jalar, G Omar, U Hashim
Design and optimization of 22nm NMOS transistor
AHA Maheran, PS Menon, I Ahmad, S Shaari, HA Elgomati, BY Majlis, ...
Australian Journal of Basic and Applied Sciences 6 (7), 1-8, 2012
Dicing die attach film for 3D stacked die QFN packages
S Abdullah, SM Yusof, I Ahmad, A Jalar, R Daud
2007 32nd IEEE/CPMT International Electronic Manufacturing Technology …, 2007
Sputtered encapsulation as wafer level packaging for isolatable MEMS devices: A technique demonstrated on a capacitive accelerometer
AA Hamzah, J Yunas, BY Majlis, I Ahmad
Sensors 8 (11), 7438-7452, 2008
Reliability of SAC405 and SAC387 as lead-free solder ball material for ball grid array packages
I Ahmad, A Jalar, BY Majlis, R Wagiran
Int. J. Eng. Technol 4 (1), 123-133, 2007
High purity polycrystalline silicon growth and characterization
U Hashim, AA Ehsan, I Ahmad
Chiang Mai J. Sci 34 (1), 47-53, 2007
Characterization of screen printed BaTiO3 thick film humidity sensor
R Wagiran, WW Zaki, SBM Noor, AH Shaari, I Ahmad
Int. J. Eng. Technol 2 (1), 22-26, 2005
Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device
NB Atan, IB Ahmad, BBY Majlis
2014 IEEE International Conference on Semiconductor Electronics (ICSE2014 …, 2014
Scaling down of the 32 nm to 22 nm gate length NMOS transistor
AHA Maheran, PS Menon, I Ahmad, HA Elgomati, BY Majlis, ...
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE …, 2012
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