Ikuti
Ibrahim ahmad
Ibrahim ahmad
Universiti Tenaga nasional, universiti kebangsaan Malaysia
Email yang diverifikasi di uniten.edu.my
Judul
Dikutip oleh
Dikutip oleh
Tahun
Optimization of PV-wind-hydro-diesel hybrid system by minimizing excess capacity
JA Razak, K Sopian, Y Ali, MA Alghoul, A Zaharim, I Ahmad
European Journal of Scientific Research 25 (4), 663-671, 2009
962009
Effect of wafer thinning methods towards fracture strength and topography of silicon die
HH Jiun, I Ahmad, A Jalar, G Omar
Microelectronics reliability 46 (5-6), 836-845, 2006
602006
Corrosion behavior of Sn-3.0 Ag-0.5 Cu lead-free solder in potassium hydroxide electrolyte
MC Liew, I Ahmad, LM Lee, MFM Nazeri, H Haliman, AA Mohamad
Metallurgical and Materials Transactions A 43, 3742-3747, 2012
402012
Solar absorption refrigeration system using new working fluid pairs
JM Abdulateef, K Sopian, MA Alghoul, MY Sulaiman, A Zaharim, I Ahmad
International journal of Energy 1 (3), 82-87, 2007
352007
Effect of Laminated Wafer Toward Dicing Process and Alternative Double Pass Sawing Method to Reduce Chipping
GO Hoh Huey Jiun, Ibrahim Ahmad, Azman Jalar
IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING, VOL. 29, NO. 1 …, 2006
35*2006
Fabrication and characterization of a 0.14 μm CMOS device using ATHENA and ATLAS simulators
I Ahmad, YK Ho, BY Majlis
Semiconductor Physics Quantum Electronics & Optoelectronics, 2006
302006
HF etching of sacrificial spin-on glass in straight and junctioned microchannels for MEMS microstructure release
AA Hamzah, BY Majlis, I Ahmad
Journal of the Electrochemical Society 154 (8), D376, 2007
272007
Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device
NB Atan, IB Ahmad, BBY Majlis
2014 IEEE international conference on semiconductor electronics (ICSE2014 …, 2014
232014
Simulation of fabrication process VDMOSFET transistor using Silvaco software
H Abdullah, J Jurait, A Lennie, ZM Nopiah, I Ahmad
European Journal of Scientific Research 29 (4), 461-470, 2009
232009
Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi method
AHA Maheran, PS Menon, I Ahmad, S Shaari
Jurnal Teknologi (Sciences and Engineering) 68 (4), 45-49, 2014
222014
Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor
I Ahmad, S Shaari, HA Elgomati, F Salehuddin
Journal of Physics: Conference Series 431 (1), 012026, 2013
222013
Application of Taguchi Method in Optimization of Gate Oxide and Silicide Thickness for 45nm NMOS Device
IA Fauziyah Salehuddin, FA Hamid, A Zaharim
International Journal of Engineering & Technology (IJET) 9 (10), 94-98, 2009
222009
Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor
AHA Maheran, PS Menon, I Ahmad, S Shaari
Materials Science in Semiconductor Processing 17, 155-161, 2014
212014
Sputtered encapsulation as wafer level packaging for isolatable MEMS devices: A technique demonstrated on a capacitive accelerometer
AA Hamzah, J Yunas, BY Majlis, I Ahmad
Sensors 8 (11), 7438-7452, 2008
202008
High purity polycrystalline silicon growth and characterization
U Hashim, AA Ehsan, I Ahmad
Chiang Mai J Sci 34 (1), 47-53, 2007
202007
The effects of multiple zincation process on aluminum bond pad surface for electroless nickel immersion gold deposition
MK Md Arshad, I Ahmad, A Jalar, G Omar, U Hashim
202006
Modelling and simulation single layer anti-reflective coating of ZnO and ZnS for silicon solar cells using silvaco software
H Abdullah, A Lennie, I Ahmad
Journal of Applied Sciences 9 (6), 1180-1184, 2009
192009
A study of SnAgNiCo vs Sn3. 8AgO. 7Cu C5 lead free solder alloy on mechanical strength of BGA solder joint
EP Leng, M Ding, WT Ling, N Amin, I Ahmad, MY Lee, A Haseeb
2008 10th Electronics Packaging Technology Conference, 588-594, 2008
192008
Modeling of 14 nm gate length n-Type MOSFET
ZAN Faizah, I Ahmad, PJ Ker, PSA Roslan, AHA Maheran
2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 1-4, 2015
182015
Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device
F Salehuddin, I Ahmad, FA Hamid, A Zaharim, U Hashim, PR Apte
International Journal of the Physical Sciences 6 (30), 7026-7034, 2011
172011
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