Erik Hosler
Erik Hosler
PsiQuantum
Verified email at psiquantum.com
Title
Cited by
Cited by
Year
Ultraintense X-ray induced ionization, dissociation, and frustrated absorption in molecular nitrogen
M Hoener, L Fang, O Kornilov, O Gessner, ST Pratt, M Gühr, EP Kanter, ...
Physical review letters 104 (25), 253002, 2010
2102010
Characterization of vibrational wave packets by core-level high-harmonic transient absorption spectroscopy
ER Hosler, SR Leone
Physical Review A 88 (2), 023420, 2013
552013
Considerations for a free-electron laser-based extreme-ultraviolet lithography program
ER Hosler, OR Wood II, WA Barletta, PJS Mangat, ME Preil
Extreme Ultraviolet (EUV) Lithography VI 9422, 94220D, 2015
282015
Metrology for block copolymer directed self-assembly structures using Mueller matrix-based scatterometry
DJ Dixit, V Kamineni, R Farrell, ER Hosler, M Preil, J Race, B Peterson, ...
Journal of Micro/Nanolithography, MEMS, and MOEMS 14 (2), 021102, 2015
172015
Static quenching of tryptophan fluorescence in proteins by a dioxomolybdenum (VI) thiolate complex
AA Rhodes, BL Swartz, ER Hosler, DL Snyder, KM Benitez, BS Chohan, ...
Journal of Photochemistry and Photobiology A: Chemistry 293, 81-87, 2014
172014
Sensitivity analysis and line edge roughness determination of 28-nm pitch silicon fins using Mueller matrix spectroscopic ellipsometry-based optical critical dimension metrology
DJ Dixit, S O’Mullane, S Sunkoju, A Gottipati, ER Hosler, VK Kamineni, ...
Journal of Micro/Nanolithography, MEMS, and MOEMS 14 (3), 031208, 2015
152015
Exhaustive oxidation of a nickel dithiolate complex: some mechanistic insights en route to sulfate formation
ER Hosler, RW Herbst, MJ Maroney, BS Chohan
Dalton Transactions 41 (3), 804-816, 2012
152012
Optical critical dimension metrology for directed self-assembly assisted contact hole shrink
D Dixit, A Green, ER Hosler, V Kamineni, ME Preil, N Keller, J Race, ...
Journal of Micro/Nanolithography, MEMS, and MOEMS 15 (1), 014004, 2016
142016
Manufacturability considerations for DSA
RA Farrell, ER Hosler, GM Schmid, J Xu, ME Preil, V Rastogi, N Mohanty, ...
Advances in Patterning Materials and Processes XXXI 9051, 90510Z, 2014
142014
Metrology for directed self-assembly block lithography using optical scatterometry
D Dixit, V Kamineni, R Farrell, E Hosler, M Preil, J Race, B Peterson, ...
Metrology, Inspection, and Process Control for Microlithography XXVIII 9050 …, 2014
92014
EUV telecentricity and shadowing errors impact on process margins
D Civay, E Hosler, V Chauhan, TG Neogi, L Smith, D Pritchard
Extreme Ultraviolet (EUV) Lithography VI 9422, 94220Z, 2015
82015
Exposing the Role of Electron Correlation in Strong-Field Double Ionization: X-ray Transient Absorption of Orbital Alignment in Xe+ and Xe2+
SG Sayres, ER Hosler, SR Leone
The Journal of Physical Chemistry A 118 (37), 8614-8624, 2014
82014
Sequential multiple ionization and fragmentation of SF6 induced by an intense free electron laser pulse
T Osipov, L Fang, B Murphy, F Tarantelli, ER Hosler, E Kukk, JD Bozek, ...
Journal of Physics B: Atomic, Molecular and Optical Physics 46 (16), 164032, 2013
62013
Extending extreme-UV lithography technology
ER Hosler, I Wood, ME Preil
SPIE Newsroom, 2016
52016
Dual frequency mid-gap capacitively coupled plasma (m-CCP) for conventional and DSA patterning at 10nm node and beyond
N Mohanty, A Ko, C Cole, V Rastogi, K Kumar, G Schmid, R Farrell, ...
Advanced Etch Technology for Nanopatterning III 9054, 90540R, 2014
52014
Method, apparatus and system for using free-electron laser compatible EUV beam for semiconductor wafer metrology
ER Hosler, PJS Mangat
US Patent 9,844,124, 2017
42017
LER improvement for sub-32nm pitch self-aligned quadruple patterning (SAQP) at back end of line (BEOL)
N Mohanty, R Farrell, C Periera, K Subhadeep, E Franke, J Smith, A Ko, ...
Advanced Etch Technology for Nanopatterning V 9782, 97820Q, 2016
42016
EUV and optical lithographic pattern shift at the 5nm node
ER Hosler, S Thiruvengadam, JR Cantone, DE Civay, UP Schroeder
Extreme Ultraviolet (EUV) Lithography VII 9776, 977616, 2016
42016
Assessment of AIMS™ EUV and SHARP actinic wavelength mask defect review tools for the evaluation of blank defect printability
E Verduijn, E Hosler, P Mangat, O Wood, R Capelli, S Perlitz, ...
EUV Symposium, Maastricht NL, 5-7, 2015
42015
Free-electron laser emission architecture impact on EUV lithography
ER Hosler, OR Wood II, WA Barletta
Extreme Ultraviolet (EUV) Lithography VIII 10143, 101431M, 2017
32017
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