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Ameer F. Roslan
Ameer F. Roslan
Email yang diverifikasi di student.utem.edu.my
Judul
Dikutip oleh
Dikutip oleh
Tahun
Design of dual‐band microstrip patch antenna with right‐angle triangular aperture slot for energy transfer application
N Hassan, Z Zakaria, WY Sam, INM Hanapiah, AN Mohamad, AF Roslan, ...
International Journal of RF and Microwave Computer‐Aided Engineering 29 (1 …, 2019
222019
Effect of channel length variation on analog and RF performance of junctionless double gate vertical MOSFET
KE Kaharudin, F Salehuddin, ASM Zain, AF Roslan
J. Eng. Sci. Technol 14 (4), 2410-2430, 2019
112019
Geometric and process design of ultra-thin junctionless double gate vertical MOSFETs.
KE Kaharudin, F Salehuddin, ASM Zain, AF Roslan
International Journal of Electrical & Computer Engineering (2088-8708) 9 (4), 2019
92019
Enhanced performance of 19 single gate MOSFET with high permittivity dielectric material
AF Roslan, F Salehuddin, ASM Zain, KE Kaharudin, I Ahmad
Indonesian Journal of Electrical Engineering and Computer Science 18 (2 …, 2020
82020
30 nm DG-FinFET 3D construction impact towards short channel effects
AF Roslan, F Salehuddin, ASM Zain, KE Kaharudin, H Hazura, AR Hanim, ...
Indonesian Journal of Electrical Engineering and Computer Science 12 (3 …, 2018
72018
Analysis of analog and RF behaviors in junctionless double gate vertical MOSFET
KE Kaharudin, Z Napiah, F Salehuddin, ASM Zain, AF Roslan
Bulletin of Electrical Engineering and Informatics 9 (1), 101-108, 2020
62020
Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method
AF Roslan, KE Kaharudin, F Salehuddin, ASM Zain, I Ahmad, ZAN Faizah, ...
Journal of Physics: Conference Series 1123 (1), 012046, 2018
62018
Minimum leakage current optimization on 22 nm SOI NMOS device with HfO2/WSix/Graphene gate structure using Taguchi method.
AHA Maheran, EN Firhat, F Salehuddin, ASM Zain, I Ahmad, ZAN Faizah, ...
Journal of Physics: Conference Series 1502 (1), 012047, 2020
52020
Performance analysis of ultrathin junctionless double gate vertical MOSFETs
KE Kaharudin, Z Napiah, F Salehuddin, ASM Zain, AF Roslan
Bulletin of Electrical Engineering and Informatics 8 (4), 1268-1278, 2019
52019
Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET
KE Kaharudin, F Salehuddin, ASM Zain, AF Roslan, I Ahmad
Journal of Physics: Conference Series 1502 (1), 012045, 2020
42020
Comparative high-k material gate spacer impact in DG-FinFET parameter variations between two structures
AF Roslan, F Salehuddin, ASM Zain, KE Kaharudin, I Ahmad, H Hazura, ...
Indonesian Journal of Electrical Engineering and Computer Science 14 (2 …, 2019
42019
Predictive analytics of CIGS solar cell using a combinational GRA-MLR-GA model
KE Kaharudin, F Salehuddin, ASM Zain, AF ROSLAN
Journal of Engineering Science and Technology 15 (4), 2823-2840, 2020
32020
Design consideration and impact of gate length variation on junctionless strained double gate MOSFET
KE Kaharudin, AF Roslan, F Salehuddin, Z Napiah, ASM Zain
International Journal of Recent Technology and Engineering 8 (2S6), 783-791, 2019
32019
Work function variations on electrostatic and RF performances of JLSDGM Device
KE Kaharudin, F Salehuddin, ASM Zain, AF Roslan, I Ahmad
Indonesian Journal of Electrical Engineering and Computer Science 23 (1 …, 2021
22021
Optimization of process parameter variations for 16nm DG-FinFET using Response Surface Methodology-Central Composite Design
AF Roslan, F Salehuddin, ASM Zain, KE Kaharudin, I Ahmad, H Hazura, ...
Journal of Physics: Conference Series 1502 (1), 012042, 2020
22020
Optimal design of junctionless double gate vertical MOSFET using hybrid Taguchi-GRA with ANN prediction
KE Kaharudin, F Salehuddin, ASM Zain, AF Roslan
Journal of Mechanical Engineering and Sciences 13 (3), 5455-5479, 2019
22019
Optimization of 16 nm DG-FinFET using L25 orthogonal array of Taguchi statistical method
AF Roslan, F Salehuddin, ASM Zain, KE Kaharudin, I Ahmad
Indonesian Journal of Electrical Engineering and Computer Science 18 (3 …, 2020
12020
Impact of optimization on high-k material gate spacer in DG-FinFET device
AF Roslan, F Salehuddin, AS Zain, KE Kaharudin
Proc Mech Eng Res Day 2019, 150-151, 2019
12019
Comparative Analysis of Process Parameter Variations in DGFinFET Device Using Statistical Methods
AF Roslan, F Salehuddin, ASM Zain, N Mansor, KE Kaharudin, I Ahmad, ...
Journal of Physics: Conference Series 1123 (1), 012048, 2018
12018
Analyze of Process Parameter Variance In 19nm Wsi2/Tio2 NMOS Device Using 2k-Factorial Design
F Salehuddin, AF Roslan, AE Zailan, KE Kaharudin, ASM Zain, AM AH, ...
Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 10 …, 2018
12018
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