Interface gap states and Schottky barrier inhomogeneity at metal/n-type GaN Schottky contacts M Mamor
Journal of Physics: Condensed Matter 21 (33), 335802, 2009
127 2009 Defects and magnetic properties in Mn-implanted K Bouziane, M Mamor, M Elzain, P Djemia, SM Chérif
Physical Review B 78 (19), 195305, 2008
45 2008 Influence of He-ion irradiation on the characteristics of Pd/n-Si0. 90Ge0. 10/Si Schottky contacts M Mamor, A Sellai, K Bouziane, SH Al Harthi, M Al Busaidi, FS Gard
Journal of Physics D: Applied Physics 40 (5), 1351, 2007
42 2007 Device analysis of Cu (In, Ga) Se2 heterojunction solar cells-some open questions U Rau, K Weinert, Q Nguyen, M Mamor, G Hanna, A Jasenek, HW Schock
MRS Online Proceedings Library (OPL) 668, H9. 1, 2001
36 2001 Electrical and structural characterization of as-grown and annealed hydrothermal bulk ZnO GH Kassier, M Hayes, FD Auret, M Mamor, K Bouziane
Journal of applied physics 102 (1), 2007
33 2007 DC magnetron sputtered tungsten: W film properties and electrical properties of W/Si Schottky diodes K Bouziane, M Mamor, F Meyer
Applied Physics A 81, 209-215, 2005
33 2005 Electrical characterization of defects introduced in M Mamor, FD Auret, SA Goodman, G Myburg
Applied physics letters 72 (9), 1069-1071, 1998
31 1998 Defects induced in GaN by europium implantation M Mamor, V Matias, A Vantomme, A Colder, P Marie, P Ruterana
Applied physics letters 85 (12), 2244-2246, 2004
29 2004 Short-range order and strain in SiGeC alloys probed by phonons E Finkman, F Meyer, M Mamor
Journal of Applied Physics 89 (5), 2580-2587, 2001
29 2001 On the electrical characteristics of Au/n-type GaAs Schottky diode M Mamor, K Bouziane, A Tirbiyine, H Alhamrashdi
Superlattices and Microstructures 72, 344-351, 2014
24 2014 Investigation of p‐type macroporous silicon formation C Lévy‐Clément, S Lust, M Mamor, J Rappich, T Dittrich
physica status solidi (a) 202 (8), 1390-1395, 2005
23 2005 Configurationally metastable defects in irradiated epitaxially grown boron-doped p-type Si M Mamor, M Willander, FD Auret, WE Meyer, E Sveinbjörnsson
Physical Review B 63 (4), 045201, 2000
22 2000 Potential barrier inhomogeneities in irradiated Pd/n-SiGe Schottky diodes A Sellai, M Mamor
Applied Physics A 89, 503-508, 2007
20 2007 Buffer effect on GMR in thin Co/Cu multilayers K Bouziane, AD Al Rawas, M Maaza, M Mamor
Journal of alloys and compounds 414 (1-2), 42-47, 2006
18 2006 Schottky barrier heights on IV-IV compound semiconductors F Meyer, M Mamor, V Aubry-Fortuna, P Warren, S Bodnar, D Dutartre, ...
Journal of Electronic Materials 25, 1748-1753, 1996
18 1996 Fermi-level pinning and Schottky barrier heights on epitaxially grown fully strained and partially relaxed n -type M Mamor, O Nur, M Karlsteen, M Willander, FD Auret
Journal of Applied Physics 86 (12), 6890-6894, 1999
17 1999 WSi Schottky diodes: effect of sputtering deposition conditions on the barrier height M Mamor, E Dufour-Gergam, L Finkman, G Tremblay, F Meyer, ...
Applied surface science 91 (1-4), 342-346, 1995
15 1995 Negatively charged excitons X− in the electron gas in CdTe/Cd1− xZnxTe quantum wells K Kheng, RT Cox, YM d'Aubigné, M Mamor, N Magnea, H Mariette, ...
Surface science 305 (1-3), 225-229, 1994
15 1994 Electronic properties of defects introduced in strained, epitaxial p-type SiGe alloys during sputter etching in an argon plasma M Mamor, FD Auret, M Willander, SA Goodman, G Myburg, F Meyer
Semiconductor Science and technology 14 (7), 611, 1999
14 1999 Fermi-level pinning in Schottky diodes on IV–IV semiconductors: Effect of Ge and C incorporation M Mamor, JL Perrossier, V Aubry-Fortuna, F Meyer, D Bouchier, S Bodnar, ...
Thin Solid Films 294 (1-2), 141-144, 1997
14 1997 
Azzouz SellaiAssociate Professor, Physics Department, Sultan Qaboos UniversityEmail yang diverifikasi di squ.edu.om
