Firman Mangasa Simanjuntak
Firman Mangasa Simanjuntak
World Premier Institute - Advanced Institute for Materials Research, Tohoku University
Verified email at tohoku.ac.jp - Homepage
TitleCited byYear
Status and Prospects of ZnO-Based Resistive Switching Memory Devices
FM Simanjuntak, D Panda, W Kung-Hwa, T Tseung-Yuen
Nanoscale Research Letters 11 (1), 368, 2016
632016
Impacts of Co doping on ZnO transparent switching memory device characteristics
FM Simanjuntak, OK Prasad, D Panda, CA Lin, TL Tsai, KH Wei, ...
Applied Physics Letters 108 (18), 183506, 2016
372016
Enhanced switching uniformity in AZO/ZnO1− x/ITO transparent resistive memory devices by bipolar double forming
FM Simanjuntak, D Panda, TL Tsai, CA Lin, KH Wei, TY Tseng
Applied Physics Letters 107 (3), 033505, 2015
342015
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
FM Simanjuntak, D Panda, TL Tsai, CA Lin, KH Wei, TY Tseng
Journal of materials science 50 (21), 6961-6969, 2015
302015
Temperature induced complementary switching in titanium oxide resistive random access memory
TYT Debashis Panda, Firman Mangasa Simanjuntak
AIP Advances 6 (7), 075314, 2016
152016
Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell
FM Simanjuntak, S Chandrasekaran, B Pattanayak, CC Lin, TY Tseng
Nanotechnology 28 (38), 38LT02, 2017
122017
Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory
S Chandrasekaran, FM Simanjuntak, TL Tsai, CA Lin, TY Tseng
Applied Physics Letters 111 (11), 113108, 2017
102017
Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell
FM Simanjuntak, P Singh, S Chandrasekaran, FJ Lumbantoruan, ...
Semiconductor Science and Technology 32 (12), 124003, 2017
82017
One bipolar transistor selector-One resistive random access memory device for cross bar memory array
R Aluguri, D Kumar, FM Simanjuntak, TY Tseng
AIP Advances 7 (9), 095118, 2017
72017
Resistive switching characteristics of hydrogen peroxide surface oxidized ZnO-based transparent resistive memory devices
FM Simanjuntak, B Pattanayak, CC Lin, TY Tseng
ECS Transactions 77 (4), 155-160, 2017
62017
Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer
S Chandrasekaran, FM Simanjuntak, TY Tseng
Japanese Journal of Applied Physics 57 (4S), 04FE10, 2018
32018
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random …
S Chandrasekaran, FM Simanjuntak, R Aluguri, TY Tseng
Thin Solid Films 660, 777-781, 2018
22018
Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory
P Singh, FM Simanjuntak, A Kumar, TY Tseng
Thin Solid Films 660, 828-833, 2018
22018
Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD
F Lumbantoruan, XX Zheng, JH Huang, RY Huang, F Mangasa, ...
Journal of Crystal Growth 501, 7-12, 2018
12018
Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device
FM Simanjuntak, S Chandrasekaran, F Gapsari, TY Tseng
IOP Conference Series: Materials Science and Engineering 494 (1), 012027, 2019
2019
Synthesis and Electrochemical Performance of α-Fe2O3 Nano Ellipse as Anode for Lithium-Ion Batteries
L Noerochim, EAP Putra, D Susanti, FM Simanjuntak, TN Rohmannudin, ...
Asian Journal of Chemistry 31 (2), 487-492, 2019
2019
Neutral Oxygen Beam Treated ZnO-Based Resistive Switching Memory Device
FM Simanjuntak, T Ohno, S Samukawa
ACS Applied Electronic Materials 1 (1), 18-24, 2018
2018
Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell
FM Simanjuntak, S Chandrasekaran, CC Lin, TY Tseng
Nanoscale research letters 13 (1), 327, 2018
2018
Annealing Effects in Structural and Electro-Optical Properties of Co Doped ZnO RRAM
D Panda, SS Kumar, FM Simanjuntak, A Dash, A Anand, TY Tseng, ...
Conference: International Conference on Microscope and XXXIX Annual Meeting …, 2018
2018
Top Electrode Thickness Dependent on Switching Characteristics of ZnO2/ZnO Bilayer Transparent Resistive Random Access Memory Devices
FM Simanjuntak, D Panda, S Chandrasekaran, TY Tseng
Conference: International Conference on Microscope and XXXIX Annual Meeting …, 2018
2018
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Articles 1–20