AlN/GaN MOS-HEMTs With Thermally Grown Passivation S Taking, D MacFarlane, E Wasige
IEEE transactions on electron devices 58 (5), 1418-1424, 2011
42 2011 Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium S Taking, A Banerjee, H Zhou, X Li, AZ Khokhar, R Oxland, I McGregor, ...
Electronics letters 46 (4), 301-302, 2010
31 2010 AlN/GaN MOS-HEMTs technology S Taking
University of Glasgow, 2012
26 2012 Dielectric and microstructural properties of BaTiO3 and Ba0. 9925Er0. 0075TiO3 ceramics FA Ismail, RAM Osman, MS Idris, S Taking, ZAZ Jamal
EPJ Web of Conferences 162, 01051, 2017
19 2017 Surface Roughness and Grain Size Characterization of Annealing Temperature Effect For Growth Gallium and Tantalum Doped Ba 0.5 Sr 0.5 TiO 3 Thin Film I Irzaman, H Darmasetiawan, H Hardhienata, M Hikam, P Arifin, SN Jusoh, ...
Atom Indonesia 35 (1), 57-67, 2009
19 2009 Indoor navigation and localisation application system W Joanne, S Taking, N Isa, K Chao
2016 3rd International Conference on Electronic Design (ICED), 327-331, 2016
16 2016 New process for low sheet and ohmic contact resistance of AIN/GaN MOS-HEMTs S Taking, AZ Khokhar, D MacFarlane, S Sharabi, AM Dabiran, E Wasige
The 5th European Microwave Integrated Circuits Conference, 306-309, 2010
13 2010 Permittivity and temperature effects on rectification performance of self-switching diodes with different geometrical structures using two-dimensional device simulator NF Zakaria, SR Kasjoo, Z Zailan, MM Isa, S Taking, MKM Arshad
Solid-State Electronics 138, 16-23, 2017
12 2017 An overview of self-switching diode rectifiers using green materials SR Kasjoo, Z Zailan, NF Zakaria, MM Isa, MKM Arshad, S Taking
AIP Conference Proceedings 1885 (1), 2017
12 2017 InGaAs-based planar barrier diode as microwave rectifier NF Zakaria, SR Kasjoo, Z Zailan, MM Isa, MKM Arshad, S Taking
Japanese Journal of Applied Physics 57 (6), 064101, 2018
10 2018 Development of enhancement mode AlGaN/GaN MOS-HEMTs using localized gate-foot oxidation A Banerjee, S Taking, D MacFarlane, A Dabiran, E Wasige
The 5th European Microwave Integrated Circuits Conference, 302-305, 2010
9 2010 The Effect of Different Dielectric Materials in Designing High Performance Metal-Insulator-Metal (MIM) Capacitors. MA Zulkifeli, SN Sabki, S Taking, NA Azmi, SS Jamuar
International Journal of Electrical & Computer Engineering (2088-8708) 7 (3), 2017
8 2017 Rectification performance of self-switching diodes in silicon substrate using device simulator Z Zailan, SR Kasjoo, NF Zakaria, MM Isa, MKM Arshad, S Taking
2016 3rd International Conference on Electronic Design (ICED), 373-376, 2016
8 2016 Characterization of self-switching diodes as microwave rectifiers using ATLAS simulator Z Zailan, NF Zakaria, MM Isa, S Taking, MKM Arshad, SR Kasjoo
2016 5th International Symposium on Next-Generation Electronics (ISNE), 1-2, 2016
8 2016 AlN/GaN-based MOS-HEMT technology: processing and device results S Taking, D MacFarlane, E Wasige
Active and Passive Electronic Components 2011, 2011
8 2011 Self-switching diodes as RF rectifiers: evaluation methods and current progress NF Zakaria, SR Kasjoo, MM Isa, Z Zailan, MKM Arshad, S Taking
Bulletin of Electrical Engineering and Informatics 8 (2), 396-404, 2019
7 2019 Permittivity and temperature effects to rectification performance of self-switching device using two-dimensional simulation NF Zakaria, Z Zailan, MM Isa, S Taking, MKM Arshad, SR Kasjoo
2016 5th International Symposium on Next-Generation Electronics (ISNE), 1-2, 2016
7 2016 Novel high performance AlGaN/GaN based enhancement‐mode metal‐oxide semiconductor high electron mobility transistor R Brown, A Al‐Khalidi, D Macfarlane, S Taking, G Ternent, I Thayne, ...
physica status solidi (c) 11 (3‐4), 844-847, 2014
6 2014 Ferroelectric and relaxor ferroelectric to paralectric transition based on lead magnesium niobate (PMN) materials RAM Osman, MS Idris, ZA Zahid Jamal, S Taking, SN Sabki, P Poopalan, ...
Advanced Materials Research 795, 658-663, 2013
6 2013 DC and RF performance of AlN/GaN MOS-HEMTs S Taking, D MacFarlane, AZ Khokhar, AM Dabiran, E Wasige
2010 Asia-Pacific Microwave Conference, 445-448, 2010
6 2010