Ikuti
Rohit Soni
Rohit Soni
IISER Berhampur
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Tahun
An electronic version of Pavlov's dog
M Ziegler, R Soni, T Patelczyk, M Ignatov, T Bartsch, P Meuffels, ...
Advanced Functional Materials 22 (13), 2744-2749, 2012
2022012
Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions
R Soni, A Petraru, P Meuffels, O Vavra, M Ziegler, SK Kim, DS Jeong, ...
Nature Communications 5 (1), 5414, 2014
1372014
Probing Cu doped Ge0. 3Se0. 7 based resistance switching memory devices with random telegraph noise
R Soni, P Meuffels, A Petraru, M Weides, C Kügeler, R Waser, H Kohlstedt
Journal of applied physics 107 (2), 2010
1182010
A double barrier memristive device
M Hansen, M Ziegler, L Kolberg, R Soni, S Dirkmann, T Mussenbrock, ...
Scientific reports 5 (1), 13753, 2015
1162015
On the stochastic nature of resistive switching in Cu doped Ge0. 3Se0. 7 based memory devices
R Soni, P Meuffels, G Staikov, R Weng, C Kügeler, A Petraru, M Hambe, ...
Journal of applied physics 110 (5), 2011
702011
Fundamental Issues and Problems in the Realization of Memristors
P Meuffels, R Soni
arXiv preprint arXiv:1207.7319, 2012
582012
Integration of “GexSe1− x” in crossbar arrays for non-volatile memory applications
R Soni, M Meier, A Rüdiger, B Holländer, C Kügeler, R Waser
Microelectronic engineering 86 (4-6), 1054-1056, 2009
342009
Reliability analysis of the low resistance state stability of Ge0. 3Se0. 7 based solid electrolyte nonvolatile memory cells
R Soni, P Meuffels, H Kohlstedt, C Kügeler, R Waser
Applied Physics Letters 94 (12), 2009
282009
In situ hard x-ray photoemission spectroscopy of barrier-height control at metal/PMN-PT interfaces
E Kröger, A Petraru, A Quer, R Soni, M Kalläne, NA Pertsev, H Kohlstedt, ...
Physical Review B 93 (23), 235415, 2016
172016
Voltage controlled biaxial strain in VO2 films grown on 0.72 Pb (Mg1∕ 3Nb2∕ 3)-0.28 PbTiO3 crystals and its effect on the transition temperature
A Petraru, R Soni, H Kohlstedt
Applied Physics Letters 105 (9), 2014
152014
Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions
R Soni, A Petraru, HS Nair, O Vavra, M Ziegler, SK Kim, DS Jeong, ...
Nanoscale 8 (20), 10799-10805, 2016
142016
Bipolar switching polarity reversal by electrolyte layer sequence in electrochemical metallization cells with dual-layer solid electrolytes
R Soni, P Meuffels, A Petraru, M Hansen, M Ziegler, O Vavra, H Kohlstedt, ...
Nanoscale 5 (24), 12598-12606, 2013
122013
Rate limiting step for the switching kinetics in Cu doped Ge0. 3Se0. 7 based memory devices with symmetrical and asymmetrical electrodes
R Soni, P Meuffels, A Petraru, O Vavra, H Kohlstedt
Journal of Applied Physics 113 (12), 2013
102013
Low-temperature dynamics of ferroelectric domains in PbZr0. 3Ti0. 7O3 epitaxial thin films studied by piezoresponse force microscopy
NV Andreeva, AF Vakulenko, A Petraru, R Soni, H Kohlstedt, ...
Applied Physics Letters 107 (15), 2015
92015
Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours
H Lim, R Soni, D Kim, G Kim, V Kornijcuk, I Kim, JK Park, CS Hwang, ...
Nanoscale 8 (34), 15621-15628, 2016
62016
Coexistence of tunneling magnetoresistance and Josephson effects in SFIFS junctions
O Vávra, R Soni, A Petraru, N Himmel, I Vávra, J Fabian, H Kohlstedt, ...
AIP Advances 7 (2), 2017
52017
Tunneling magnetoresistance and electroresistance properties of composite‐barrier ferroelectric tunnel junctions
A Petraru, R Soni, H Kohlstedt
physica status solidi (RRL)-Rapid Research Letters 6 (3), 138-140, 2012
52012
A Novel Dual-Layered Electrolytic Resistance Memory with Enhanced Retention
R Soni, C Schindler, M Weides, A Rudiger, C Kugeler, R Waser
2008 8th IEEE Conference on Nanotechnology, 764-766, 2008
22008
Ferroelectric Size Effects on Statics and Dynamics of Domain Wall
S Kale, A Petraru, H Kohlstedt, R Soni
Small, 2303880, 2023
12023
Electrically Controlled Reversible Polarization Fatigue–Recovery in Ferroelectric Thin Film Capacitors
S Kale, A Petraru, H Kohlstedt, R Soni
ACS Applied Electronic Materials 4 (4), 1692-1702, 2022
12022
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