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Tsuyoshi Moriya
Tsuyoshi Moriya
東京エレクトロン
Verified email at tel.com
Title
Cited by
Cited by
Year
Particle removal method for a substrate transfer mechanism and apparatus
T Moriya, H Nakayama, K Okuyama, M Shimada
US Patent 7,748,138, 2010
3152010
Atmospheric transfer chamber, processed object transfer method, program for performing the transfer method, and storage medium storing the program
T Moriya, T Hirooka, A Shimizu, S Tanaka
US Patent App. 11/376,163, 2006
1252006
Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
N Ito, F Uesugi, T Moriya
US Patent 6,184,489, 2001
1012001
Internal member of a plasma processing vessel
K Mitsuhashi, H Nakayama, N Nagayama, T Moriya, H Nagaike
US Patent 7,780,786, 2010
982010
Plasma processing apparatus, ring member and plasma processing method
Y Sasaki, T Moriya, H Nagaike
US Patent App. 10/773,245, 2005
932005
Reduction of particle contamination in plasma-etching equipment by dehydration of chamber wall
N Ito, T Moriya, F Uesugi, M Matsumoto, S Liu, Y Kitayama
Japanese journal of applied physics 47 (5R), 3630, 2008
912008
Real-time monitoring of scattered laser light by a single particle of several tens of nanometers in the etching chamber in relation to its status with the equipment
F Uesugi, N Ito, T Moriya, H Doi, S Sakamoto, Y Hayashi
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (3 …, 1998
531998
Particle removal apparatus and method and plasma processing apparatus
T Moriya, H Nagaike
US Patent 7,651,586, 2010
472010
Substrate processing apparatus and substrate transferring method
K Tezuka, H Koizumi, T Moriya, H Nakayama
US Patent 7,299,104, 2007
462007
Annealing properties of defects in B+-and F+-implanted Si studied using monoenergetic positron beams
A Uedono, T Kitano, K Hamada, T Moriya, T Kawano, S Tanigawa, ...
Japanese journal of applied physics 36 (5R), 2571, 1997
441997
Plasma processing apparatus, abnormal discharge detecting method for the same, program for implementing the method, and storage medium storing the program
T Moriya
US Patent App. 11/259,038, 2006
432006
Particle reduction and control in plasma etching equipment
T Moriya, H Nakayama, H Nagaike, Y Kobayashi, M Shimada, K Okuyama
IEEE transactions on semiconductor manufacturing 18 (4), 477-486, 2005
412005
Generation of positively charged particles at an anode and transport to device wafers in a real radio frequency plasma etching chamber for tungsten etch-back process
T Moriya, N Ito, F Uesugi, Y Hayashi, K Okamura
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18 (4 …, 2000
372000
Observation of the trajectories of particles in process equipment by an in situ monitoring system using a laser light scattering method
N Ito, T Moriya, F Uesugi, H Doi, S Sakamoto, Y Hayashi
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
311998
Capture of flaked particles during plasma etching by a negatively biased electrode
T Moriya, N Ito, F Uesugi
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
302004
Effects of recoil-implanted oxygen on depth profiles of defects and annealing processes in P+-implanted Si studied using monoenergetic positron beams
A Uedono, T Kitano, M Watanabe, T Moriya, T Kawano, S Tanigawa, ...
Japanese journal of applied physics 35 (4R), 2000, 1996
301996
Gas supply member and plasma processing apparatus
T Moriya, T Murakami
US Patent 7,416,635, 2008
282008
Defects in Ion-Implanted 3C–SiC Probed by a Monoenergetic Positron Beam
A Uedono, H Itoh, T Ohshima, Y Aoki, M Yoshikawa, I Nashiyama, ...
Japanese journal of applied physics 35 (12R), 5986, 1996
281996
Substrate cleaning apparatus and method
T Moriya, H Nakayama
US Patent 7,628,864, 2009
272009
Particle removal apparatus and method and plasma processing apparatus
T Moriya, H Nagaike
US Patent 8,052,798, 2011
262011
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Articles 1–20