The solution of stereo correspondence problem using block matching algorithm in stereo vision mobile robot RA Hamzah, AMA Hamid, SIM Salim 2010 Second International Conference on Computer Research and Development …, 2010 | 24 | 2010 |
Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor I Ahmad, S Shaari, HA Elgomati, F Salehuddin Journal of Physics: Conference Series 431 (1), 012026, 2013 | 23 | 2013 |
Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi method AHA Maheran, PS Menon, I Ahmad, S Shaari Jurnal Teknologi (Sciences and Engineering) 68 (4), 45-49, 2014 | 22 | 2014 |
Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor AHA Maheran, PS Menon, I Ahmad, S Shaari Materials Science in Semiconductor Processing 17, 155-161, 2014 | 21 | 2014 |
Overview of positioning techniques for LTE technology MFM Mahyuddin, AAM Isa, MSIM Zin, AM AH, Z Manap, MK Ismail Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 9 …, 2017 | 19 | 2017 |
Development of LPG leakage detector system using arduino with Internet of Things (IoT) MA Hannan, ASM Zain, F Salehuddin, H Hazura, SK Idris, AR Hanim, ... Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 10 …, 2018 | 18 | 2018 |
Modeling of 14 nm gate length n-Type MOSFET ZAN Faizah, I Ahmad, PJ Ker, PSA Roslan, AHA Maheran 2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 1-4, 2015 | 18 | 2015 |
Scaling down of the 32 nm to 22 nm gate length NMOS transistor AHA Maheran, PS Menon, I Ahmad, HA Elgomati, BY Majlis, ... 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE …, 2012 | 14 | 2012 |
Design and optimization of 22nm NMOS transistor AHA Maheran, PS Menon, I Ahmad, S Shaari, HA Elgomati, BY Majlis, ... Australian Journal of Basic and Applied Sciences 6 (7), 1-8, 2012 | 14 | 2012 |
Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal array F Salehuddin, I Ahmad, FA Hamid, A Zaharim, AMA Hamid, PS Menon, ... 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE …, 2012 | 13 | 2012 |
Statistical process modelling for 32nm high-K/metal gate PMOS device AHA Maheran, ZAN Faizah, PS Menon, I Ahmad, PR Apte, T Kalaivani, ... 2014 IEEE international conference on Semiconductor Electronics (ICSE2014 …, 2014 | 12 | 2014 |
A review of energy harvesting in localization for wireless sensor node tracking MIM Ismail, RA Dziyauddin, R Ahmad, N Ahmad, NA Ahmad, AMA Hamid IEEE Access 9, 60108-60122, 2021 | 11 | 2021 |
Analysis of Threshold Voltage Variance in 45nm N-Channel Device Using L27 Orthogonal Array Method F Salehuddin, ASM Zain, NM Idris, AKM Yamin, AMA Hamid, I Ahmad, ... Advanced Materials Research 903, 297-302, 2014 | 10 | 2014 |
Vth and ILEAK Optimization using taguchi method at 32nm bilayer graphene PMOS I Ahmad, PJ Ker, PS Menon, AM AH Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 9 …, 2017 | 8 | 2017 |
30 nm DG-FinFET 3D construction impact towards short channel effects AF Roslan, F Salehuddin, ASM Zain, KE Kaharudin, H Hazura, AR Hanim, ... Indonesian Journal of Electrical Engineering and Computer Science 12 (3 …, 2018 | 7 | 2018 |
Threshold voltage optimization in a 22nm High-k/Salicide PMOS device AHA Maheran, PS Menon, I Ahmad, Z Yusoff RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics, 126-129, 2013 | 7 | 2013 |
Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method AF Roslan, KE Kaharudin, F Salehuddin, ASM Zain, I Ahmad, ZAN Faizah, ... Journal of Physics: Conference Series 1123 (1), 012046, 2018 | 6 | 2018 |
Process parameter optimisation for minimum leakage current in a 22nm p-type MOSFET using Taguchi method AM AH, PS Menon, I Ahmad, F Salehuddin, ASM Zain Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 8 …, 2016 | 6 | 2016 |
Design and optimization of 22nm NMOS transistor AH Afifah Maheran, PS Menon, I Ahmad, S Shaari, HA Elgomati, ... | 6 | 2012 |
Minimum leakage current optimization on 22 nm SOI NMOS device with HfO2/WSix/Graphene gate structure using Taguchi method. AHA Maheran, EN Firhat, F Salehuddin, ASM Zain, I Ahmad, ZAN Faizah, ... Journal of Physics: Conference Series 1502 (1), 012047, 2020 | 5 | 2020 |