Ikuti
Afifah Maheran A. H.
Afifah Maheran A. H.
Email yang diverifikasi di utem.edu.my
Judul
Dikutip oleh
Dikutip oleh
Tahun
The solution of stereo correspondence problem using block matching algorithm in stereo vision mobile robot
RA Hamzah, AMA Hamid, SIM Salim
2010 Second International Conference on Computer Research and Development …, 2010
242010
Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor
I Ahmad, S Shaari, HA Elgomati, F Salehuddin
Journal of Physics: Conference Series 431 (1), 012026, 2013
232013
Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi method
AHA Maheran, PS Menon, I Ahmad, S Shaari
Jurnal Teknologi (Sciences and Engineering) 68 (4), 45-49, 2014
222014
Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor
AHA Maheran, PS Menon, I Ahmad, S Shaari
Materials Science in Semiconductor Processing 17, 155-161, 2014
212014
Overview of positioning techniques for LTE technology
MFM Mahyuddin, AAM Isa, MSIM Zin, AM AH, Z Manap, MK Ismail
Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 9 …, 2017
192017
Development of LPG leakage detector system using arduino with Internet of Things (IoT)
MA Hannan, ASM Zain, F Salehuddin, H Hazura, SK Idris, AR Hanim, ...
Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 10 …, 2018
182018
Modeling of 14 nm gate length n-Type MOSFET
ZAN Faizah, I Ahmad, PJ Ker, PSA Roslan, AHA Maheran
2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 1-4, 2015
182015
Scaling down of the 32 nm to 22 nm gate length NMOS transistor
AHA Maheran, PS Menon, I Ahmad, HA Elgomati, BY Majlis, ...
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE …, 2012
142012
Design and optimization of 22nm NMOS transistor
AHA Maheran, PS Menon, I Ahmad, S Shaari, HA Elgomati, BY Majlis, ...
Australian Journal of Basic and Applied Sciences 6 (7), 1-8, 2012
142012
Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal array
F Salehuddin, I Ahmad, FA Hamid, A Zaharim, AMA Hamid, PS Menon, ...
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE …, 2012
132012
Statistical process modelling for 32nm high-K/metal gate PMOS device
AHA Maheran, ZAN Faizah, PS Menon, I Ahmad, PR Apte, T Kalaivani, ...
2014 IEEE international conference on Semiconductor Electronics (ICSE2014 …, 2014
122014
A review of energy harvesting in localization for wireless sensor node tracking
MIM Ismail, RA Dziyauddin, R Ahmad, N Ahmad, NA Ahmad, AMA Hamid
IEEE Access 9, 60108-60122, 2021
112021
Analysis of Threshold Voltage Variance in 45nm N-Channel Device Using L27 Orthogonal Array Method
F Salehuddin, ASM Zain, NM Idris, AKM Yamin, AMA Hamid, I Ahmad, ...
Advanced Materials Research 903, 297-302, 2014
102014
Vth and ILEAK Optimization using taguchi method at 32nm bilayer graphene PMOS
I Ahmad, PJ Ker, PS Menon, AM AH
Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 9 …, 2017
82017
30 nm DG-FinFET 3D construction impact towards short channel effects
AF Roslan, F Salehuddin, ASM Zain, KE Kaharudin, H Hazura, AR Hanim, ...
Indonesian Journal of Electrical Engineering and Computer Science 12 (3 …, 2018
72018
Threshold voltage optimization in a 22nm High-k/Salicide PMOS device
AHA Maheran, PS Menon, I Ahmad, Z Yusoff
RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics, 126-129, 2013
72013
Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method
AF Roslan, KE Kaharudin, F Salehuddin, ASM Zain, I Ahmad, ZAN Faizah, ...
Journal of Physics: Conference Series 1123 (1), 012046, 2018
62018
Process parameter optimisation for minimum leakage current in a 22nm p-type MOSFET using Taguchi method
AM AH, PS Menon, I Ahmad, F Salehuddin, ASM Zain
Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 8 …, 2016
62016
Design and optimization of 22nm NMOS transistor
AH Afifah Maheran, PS Menon, I Ahmad, S Shaari, HA Elgomati, ...
62012
Minimum leakage current optimization on 22 nm SOI NMOS device with HfO2/WSix/Graphene gate structure using Taguchi method.
AHA Maheran, EN Firhat, F Salehuddin, ASM Zain, I Ahmad, ZAN Faizah, ...
Journal of Physics: Conference Series 1502 (1), 012047, 2020
52020
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